MOS Contact Resistance Test Method Temperature Compensation
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Solution Overview
Problem
The measurement accuracy of MOS transistors in semiconductor manufacturing is adversely affected by high contact resistance, which is influenced by ambient temperature, making it challenging to obtain accurate electrical parameters and component modeling.
Innovation Solution
A contact resistance test method and device that determine the functional relationship between channel width and resistance at various sampling temperatures, calculate the calibration coefficient for the current ambient temperature, and adjust the measurement result to obtain accurate contact resistance, thereby mitigating the impact of temperature fluctuations and parasitic resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If contact resistance measurement is performed in DRAM manufacturing process, then electrical parameters of MOS transistor can be obtained, but measurement accuracy is adversely affected due to high contact resistance and parasitic resistance
Solution Approach 1:
The patent segments the total resistance measurement into separate components by performing measurements at multiple channel widths. By measuring the first resistance at a first channel width and the second resistance at a second channel width, the method isolates the contact resistance component from the channel resistance, enabling accurate extraction of contact resistance that was previously obscured by parasitic effects
Solution Approach 2:
The patent changes the channel width parameter to differentiate between contact resistance and channel resistance measurements. By varying the channel width while keeping other parameters constant, the method creates measurable differences that allow mathematical separation of the contact resistance component from the total resistance, thereby improving measurement accuracy
2Measurement precision
If contact resistance measurement is performed without temperature compensation, then measurement process is simple, but contact resistance is affected by ambient temperature variations
Solution Approach 1:
The patent performs preliminary temperature compensation by determining a temperature coefficient based on measurements at different temperatures, then applies this compensation before final contact resistance calculation. This preliminary action removes temperature-induced errors from the measurement data, ensuring accurate contact resistance values regardless of ambient temperature variations
Data Source
AI summary
A contact resistance test method and related devices are provided. When a MOS transistor working in a linear region is tested, a functional relationship between the channel width of the MOS transistor and total resistances of the MOS transistor at sampling temperatures is determined, to determine the contact resistance of the MOS transistor at the sampling temperatures. A calibration coefficient of the contact resistance at a current ambient temperature is determined based on the contact resistance of the MOS transistor at the sampling temperatures. A measurement result of the contact resistance is further adjusted based on the calibration coefficient of the contact resistance at the current ambient temperature, to obtain an accurate contact resistance at the current ambient temperature.