MOS Contact Resistance Testing With Temperature Compensation
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Solution Overview
Problem
The reliability of MOS transistor tests is compromised due to the temperature-dependent changes in the resistance value of contact resistors, leading to reduced precision in measurement.
Innovation Solution
A test method and device that acquire the resistance value per area and temperature coefficient of the contact resistor, allowing for the determination of a target resistance value, which corrects for temperature influences and improves measurement accuracy by using a processor and memory to calculate the target resistance value based on the resistance value per area, temperature coefficient, and area of the contact resistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the resistance value of the contact resistor is measured directly without temperature compensation, then the measurement process is simple, but the measurement precision deteriorates due to temperature-dependent changes in resistance value
Solution Approach 1:
The patent applies parameter changes by introducing temperature coefficient parameters (α and β) to compensate for temperature effects on resistance measurement. The system measures ambient temperature and uses these parameters to calculate and compensate for temperature-induced resistance changes, thereby improving measurement precision without requiring complex temperature-controlled measurement environments
Solution Approach 2:
The patent replaces physical temperature control mechanisms with a computational compensation approach. Instead of using complex thermal control hardware to maintain constant temperature during measurement, the system substitutes a processor-based calculation method that uses temperature coefficients and ambient temperature readings to correct the resistance value mathematically
2Measurement precision
If the resistance value is maintained at a fixed value during testing, then the test precision improves, but the adaptability to temperature changes deteriorates
Solution Approach 1:
The patent applies dynamics by making the resistance value dynamic rather than fixed. The compensated resistance value is calculated based on the ambient temperature and temperature coefficients, allowing the reference resistance value to adapt automatically to temperature changes. This dynamic adjustment maintains measurement precision across varying temperature conditions without requiring manual recalibration or fixed temperature environments
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively eliminates the impact of environmental temperature on measurement results, enhancing the precision of MOS transistor testing by accounting for temperature coefficients and resistance values per area.
Implementation Method 1
acquire a temperature coefficient of resistance of the contact resistor
Data Source
AI summary
A test method and device for a contact resistor are provided, configured to test a contact resistor of a metal-oxide-semiconductor (MOS) transistor. The method includes: a resistance value per area and a temperature coefficient of resistance of the contact resistor are acquired; and a target resistance value of the contact resistor is determined according to the resistance value per area, the temperature coefficient of resistance, and an area of the contact resistor.