MOS Current-Mode Thermal Sensor for Low Power Temperature Measurement
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Solution Overview
Problem
Conventional thermal sensors for micro-processors face challenges in achieving high accuracy and low power consumption while being sensitive to process variations and MOS mismatch, leading to reduced linearity and increased complexity, which is costly and inefficient for volume production.
Innovation Solution
A MOS-based current-mode thermal sensor that generates PTAT and CTAT currents, utilizing a nonlinear feedback loop and a SAR-type ADC to provide a digital output, is developed, which is less sensitive to process variations and allows for low voltage operation, high linearity, and compatibility with future technology scaling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional BJT-based thermal sensors with ADC and reference are used, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The patent extracts only the essential temperature sensing function by using a simple PTAT current generator and comparator circuit, removing the complex ADC and reference voltage generator while maintaining measurement capability through direct current comparison
Solution Approach 2:
Instead of converting temperature to voltage and then to digital signal through complex ADC, the patent inverts the approach by directly comparing PTAT current with a reference current to generate digital output, simplifying the conversion path
2Measurement precision
If conventional BJT-based thermal sensors are used, then measurement precision is improved, but manufacturing precision deteriorates due to sensitivity to process variations and MOS mismatch
Solution Approach 1:
The patent changes the sensing parameter from voltage (Vbe) to current (PTAT current), which has better matching characteristics and is less sensitive to process variations and MOS device mismatch, improving manufacturing precision
Solution Approach 2:
The patent introduces a feedback mechanism where the PTAT current is continuously compared with a reference current, and the comparison result is used to adjust the sensing operation, compensating for process variations and improving measurement precision
3Measurement precision
If conventional BJT-based thermal sensors are used, then measurement precision is improved, but use of energy increases
Solution Approach 1:
The patent uses simple current mirrors and basic comparator circuits that consume minimal power, replacing the energy-intensive ADC and reference voltage generator, achieving acceptable measurement precision with significantly reduced power consumption
Solution Approach 2:
The patent employs periodic sampling of the PTAT current and reference current comparison, rather than continuous conversion, reducing the average power consumption while maintaining measurement precision through adequate sampling frequency
4Device complexity
If MOS-based current-mode thermal sensor is used, then device complexity is reduced, but measurement precision deteriorates due to MOS mismatch sensitivity
Solution Approach 1:
The patent uses current as the sensing parameter instead of voltage, and carefully designs the current mirror ratios and reference current to compensate for MOS device mismatch, maintaining measurement precision while using simpler circuit topology
5Measurement precision
If conventional BJT-based thermal sensors are used, then measurement precision is improved, but area increases
Solution Approach 1:
The patent extracts only the minimal necessary components for temperature sensing - a PTAT current generator and a comparator - removing the large-area ADC and reference voltage generator, achieving acceptable precision with significantly reduced silicon area
Solution Approach 2:
The patent merges the temperature sensing function with the current comparison function in a single integrated circuit block, eliminating the need for separate ADC and reference voltage generation circuits, reducing overall sensor area
Data Source
AI summary
Described is a current-mode thermal sensor apparatus which comprises: a first transistor with a gate terminal coupled to a first node; a second transistor with a gate terminal coupled to a second node; a first resistor coupled to the first and second nodes; a second resistor coupled to the first node and a supply node; and a diode coupled to the second node and the supply node.


