MOS Gate Antenna Structure for Locating Plasma Damage Sources
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Solution Overview
Problem
The challenge in semiconductor integrated circuit manufacturing is the difficulty in locating and monitoring plasma damage to gate dielectric layers due to non-uniform plasma etching, which causes charge accumulation and damage, exacerbated by unreasonable wiring density and uneven plasma radiation.
Innovation Solution
A testing structure and method utilizing a testing substructure with a first MOS transistor, a first gate lead, a first antenna, and a monitoring gate pad to amplify plasma charge absorption and damage, accompanied by a testing reference structure for comparison, allowing for the quantification of plasma damage through gate current monitoring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If plasma etching is used for pattern etching of metal layers, then the process has good directionality and low temperature requirement, but non-uniform plasma radiation causes charge accumulation and damage to gate dielectric
Solution Approach 1:
The invention divides the monitoring function into separate testing substructures, each corresponding to a specific metal layer. Each substructure includes a MOS transistor with an antenna connected to its gate lead, allowing independent monitoring of plasma damage for each metal layer during sequential etching processes.
Solution Approach 2:
The antenna acts as an intermediary that concentrates plasma charges onto the gate lead of the MOS transistor. By introducing this intermediary element, the testing structure amplifies the plasma charge absorption effect, making the damage more detectable and enabling precise localization of the damage source.
2Productivity
If wiring density increases to meet circuit size reduction requirements, then circuit integration improves, but charge accumulation and plasma damage to gate dielectric are exacerbated
Solution Approach 1:
The testing structure is segmented into multiple independent substructures, each associated with a specific metal layer. This segmentation allows the monitoring function to be distributed across different layers, enabling precise identification of which specific layer causes plasma damage without affecting the overall high-density wiring design.
3Device complexity
If conventional testing methods are used without antenna amplification, then device complexity is low, but the ability to detect and locate plasma damage is insufficient
Solution Approach 1:
The antenna serves as a mediating element that enhances the interaction between plasma charges and the gate dielectric. By introducing this intermediary structure, the testing capability is significantly improved without substantially increasing overall device complexity, as the antenna can be integrated into the existing metal layer routing.
Solution Approach 2:
The invention changes the electrical parameters of the testing structure by introducing the antenna, which modifies the charge absorption characteristics. This parameter change amplifies the plasma damage effect, making it detectable through gate current measurements while maintaining a relatively simple structural implementation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively identifies and quantifies plasma damage to gate dielectric layers by amplifying charge absorption and comparing gate currents, enabling rapid identification of plasma-damaged metal layers and locating the source of plasma damage.
Implementation Method 1
The first antenna is configured to increase absorption of the plasma charges and amplify the damage caused by the plasma charges to the first gate dielectric layer
Implementation Method 2
The first antenna, the first gate lead and the first gate conductive material layer form a first pathway for accumulating plasma charges towards a surface of the first gate dielectric layer
Data Source
AI summary
This application discloses a testing structure for locating a source of a plasma damage. A testing substructure corresponding to a selected metal layer includes a first MOS transistor, a first gate lead, a first antenna and a monitoring gate pad. The first gate lead is composed of a metal wire of the selected metal layer. The first antenna is connected with the first gate lead. The first gate lead is connected with a first gate conductive material layer of the first MOS transistor. The first antenna, the first gate lead and the first gate conductive material layer form a first pathway for accumulating plasma charges towards a surface of a first gate dielectric layer. The monitoring gate pad is connected with the first gate lead. This application further discloses a testing method for locating a source of a plasma damage. This application can locate the source of the plasma damage.