MOS Gate Layout With Extended Gate Regions for Leakage Control
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Solution Overview
Problem
Semiconductor devices face challenges in space efficiency and leakage current issues, particularly in multi-device configurations where voltage operations require both low-voltage and high-voltage capabilities, and leakage current can occur even in the gate-off state.
Innovation Solution
The semiconductor device design includes an active region with a channel area between conductivity-spaced regions, featuring a gate oxide layer and a gate metal layer with specific portions inside and outside the active region, optimizing the layout to improve space efficiency and prevent leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple semiconductor devices are integrated in a semiconductor apparatus to achieve mass capacity and multi-functionality, then the functionality and capacity are improved, but space efficiency deteriorates due to the neighboring arrangement of devices
Solution Approach 1:
The gate oxide layer and gate metal layer are merged into a single continuous structure that extends both inside and outside the active region. This merging allows adjacent semiconductor devices to share common gate structures, reducing the total area required while maintaining low-voltage and high-voltage operational capabilities
Solution Approach 2:
The extended gate structure serves multiple functions: it acts as a gate electrode for voltage control, provides isolation between adjacent devices, and enables both low-voltage logic operations and high-voltage panel driving functions within the same apparatus
2Area of stationary object
If the gate oxide layer and gate metal layer are extended outside the active region, then space efficiency is improved through better layout optimization, but device complexity increases due to the extended structure configuration
Solution Approach 1:
The gate structure is segmented into two functional portions: a first portion inside the active region for voltage control and a second portion extending outside for isolation and shared functionality. This segmentation allows each part to serve specific purposes while maintaining overall structural simplicity
Solution Approach 2:
The gate structure extends in the lateral dimension beyond the active region boundaries, utilizing the spatial dimension outside the traditional active area to achieve both space efficiency and functional integration without increasing vertical complexity
3Device complexity
If a conventional gate structure is used, then device simplicity is maintained, but leakage current occurs in the gate-off state and hump phenomenon appears due to early turn-on
Solution Approach 1:
The extended gate structure preemptively counteracts leakage current and hump phenomenon by providing early field control in the drift region. The gate field is established before carrier injection, preventing premature channel formation and reducing off-state leakage current
Solution Approach 2:
The gate oxide and gate metal layers are formed to extend into the drift region before device operation, establishing the electric field control mechanism in advance. This preliminary structural configuration ensures proper field distribution during both off-state and turn-on transitions
Data Source
AI summary
The present disclosure relates to a semiconductor device, and more particularly, to a metal-oxide semiconductor device. The semiconductor device according to an embodiment of the present disclosure may include: an active region including a channel area disposed between a first region and a second region which have a first conductivity and are spaced apart from each other; a gate oxide layer disposed on the active region; and a gate metal layer disposed on the gate oxide layer, wherein at least any one of the gate oxide layer and the gate metal layer includes a first portion located inside the active region and second portions extended and located outside the active region.