MOS Gate Structure With Dummy Thermal Via Heat Dissipation
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Solution Overview
Problem
Heat dissipation in semiconductor devices is inefficient due to low thermal conductivity of interlayer dielectric materials, leading to excessive heat build-up and potential performance limitations or failure, especially in three-dimensional integrated circuits.
Innovation Solution
Incorporation of thermally conductive electrical insulator pillars, such as diamond or metal oxide/nitride materials, into the gate structure to facilitate heat transfer from the active layer to the exterior of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If interlayer dielectric materials are used to insulate between layers, then electrical insulation is achieved, but thermal conductivity is low leading to heat build-up
Solution Approach 1:
The patent divides the heat dissipation path by introducing separate thermal vias through the interlayer dielectric material. These vias create dedicated thermal conduction channels that are segmented from the electrical signal paths, allowing heat to be removed efficiently while maintaining electrical insulation between layers.
Solution Approach 2:
The patent introduces an intermediary thermal via structure that mediates between the heat-generating active layer and the heat sink. This intermediary component provides a low-resistance thermal path through the interlayer dielectric without compromising its electrical insulation function, effectively decoupling the thermal and electrical requirements.
2Productivity
If three-dimensional integrated circuits with stacked chips are used to increase integration, then device functionality is improved, but heat dissipation becomes more difficult
Solution Approach 1:
The patent addresses heat dissipation in 3D integrated circuits by extending the thermal management solution into the vertical dimension. Thermal vias are implemented through multiple interlayer dielectric layers, creating a three-dimensional thermal conduction network that efficiently removes heat from densely stacked chip layers without increasing lateral heat concentration.
3Temperature
If thermally conductive materials are introduced to improve heat dissipation, then thermal conductivity is enhanced, but electrical insulation may be compromised
Solution Approach 1:
The patent applies local quality by creating thermally conductive regions (thermal vias) only where heat dissipation is needed, while maintaining electrical insulation in the surrounding interlayer dielectric material. The thermal vias are locally positioned to provide heat sinks for specific heat-generating structures, allowing high thermal conductivity in critical areas while preserving overall electrical insulation.
Solution Approach 2:
The patent employs composite material structures where thermally conductive materials (such as metal-filled vias or diamond-like carbon) are integrated into the interlayer dielectric. This composite approach combines the electrical insulation properties of the dielectric material with the high thermal conductivity of the embedded thermal material, achieving both requirements simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances heat dissipation by maintaining transistor performance while reducing heat concentration, allowing for more even temperature distribution and improved device performance.
Implementation Method 1
at least one thermally conductive electrical insulator pillar in contact with the gate structure. The at least one thermally conductive electrical insulator pillar extends from the gate structure to a back end of line (BEOL) layer
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a gate structure on the semiconductor substrate, the gate structure comprising a source region, a drain region, and a gate electrode, and at least one thermally conductive electrical insulator pillar in contact with the gate structure, wherein the at least one thermally conductive electrical insulator pillar extends from the gate structure to a back end of line (BEOL) layer of the semiconductor device.