MOS High-Voltage Transmission Switch With Low-Resistance Drive
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Solution Overview
Problem
Existing high voltage transmission switches for ultrasound applications have high power consumption due to the need for biasing current to bring the switch on, and they introduce resistance that affects signal quality, limiting their resolution and efficiency.
Innovation Solution
A high voltage transmission switch using MOS transistors with resistance dependent only on geometric parameters, eliminating the need for biasing current and incorporating a switching block with driving circuit and output buffer for efficient operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If biasing current is used to bring the switch on, then the switch can operate, but power consumption increases
Solution Approach 1:
The patent extracts and eliminates the biasing current requirement from the switch operation. The MOS transistor-based switch operates without needing continuous biasing current, removing this energy-consuming element while maintaining reliable switching functionality between transmission and reception modes.
Solution Approach 2:
The switch circuit serves itself by using the inherent properties of MOS transistors that do not require external biasing current to maintain their switching state. The circuit automatically operates in transmission or reception mode based on the control signal without needing additional power to sustain the switching state.
2Reliability
If biasing current is used to bring the switch on, then the switch can operate, but resistance increases affecting signal quality
Solution Approach 1:
The patent removes the source of increased resistance by eliminating the biasing current mechanism. The MOS transistor switch operates with minimal on-resistance determined only by its geometric parameters, not by biasing current levels, thereby preserving signal quality during ultrasonic transmission and reception.
3Power
If components with big sizes are used to sustain high voltages and supply high currents, then the driving circuit can handle high voltage signals, but parasitic capacitances increase
Solution Approach 1:
The patent changes the electrical parameters of the switching components by using MOS transistors with optimized geometric parameters. This allows the switch to sustain high voltages (±100V) while maintaining low parasitic capacitances, as the capacitance is determined by the transistor geometry rather than large discrete components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces power consumption and improves signal quality by minimizing resistance and noise, enabling low noise level transmission with reduced power usage and increased resolution.
Implementation Method 1
a switching block (41) coupled between a connection terminal (Xdcr) to a load and a low voltage output terminal (LVout) and comprising at least a first switching transistor (M41) and a second switching transistor (M42) being coupled between the connection terminal and the low voltage output terminal
Implementation Method 2
a driving circuit (43) coupled between a first supply terminal (60), configured to receive a positive low voltage supply reference (LVP), and a second supply terminal (64), configured to receive a negative high voltage supply reference (HVN), and having an output terminal (OUT) connected to the switching block
Implementation Method 3
The solution reduces power consumption and improves signal quality by minimizing resistance and noise, enabling low noise level transmission with reduced power usage and increased resolution
Data Source
AI summary
A high voltage transmission switch comprises a switching block coupled between a connection terminal to a load and a low voltage output terminal and comprising at least a first switching transistor and a second switching transistor coupled between the connection terminal and the low voltage output terminal and interconnected at a first circuit node; and a driving circuit coupled between a positive low voltage supply reference and a negative high voltage supply reference and having an output terminal connected to the switching block. The driving circuit including at least a first driving transistor coupled between the positive low voltage supply reference and the output terminal and a second driving transistor coupled between the output terminal and the negative high voltage supply reference.