MOS Qubit Gate Structure for 3D Electrostatic Charge Control
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Solution Overview
Problem
Current semiconductor devices in quantum architectures face challenges with high interface quality requirements due to load traps, limiting industrial manufacturing and integration into System On Chip systems, especially with low thermal budgets and inadequate electrostatic control of charge carriers.
Innovation Solution
A method for producing a metal-oxide-semiconductor (MOS) type structure with side gates and a vertical gate, where trenches are formed in the semiconductor layer, dielectric barriers are created, and an electrode layer is deposited to form lateral grids, allowing for electrostatic control of charge carriers perpendicular to the z direction, ensuring high manufacturing quality and compatibility with industrial processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If heterostructures with silicon and silicon-germanium layers are used to achieve defect-free interfaces, then interface quality is improved, but thermal budget is reduced and industrial manufacturing becomes more constrained
Solution Approach 1:
The device is segmented into distinct functional regions: a first MOS structure with lateral gates for quantum dot control, and a second MOS structure with vertical gates for charge detection. This segmentation allows each structure to be optimized independently - the lateral gate structure for high interface quality quantum operations, and the vertical gate structure for sensitive charge detection - while both being fabricated using standard CMOS processes on the same substrate.
Solution Approach 2:
The invention transitions from purely lateral gate control to a three-dimensional configuration by adding vertical gates that extend through the substrate. The vertical gates provide electrostatic control in the z-dimension (perpendicular to the substrate), complementing the lateral gates' control in the x-y plane. This dimensional addition enables independent control of quantum dot formation and charge detection without compromising interface quality.
2Ease of operation
If a single lateral gate surrounding the active area is used, then electrostatic environment modulation is achieved, but electrostatic control of charges far from interfaces is not possible and industrial fabrication is not directly transposable
Solution Approach 1:
The gate system is segmented into multiple independent gates: lateral gates for quantum dot electrostatic control and separate vertical gates for charge detection. Each gate can be independently biased and controlled, allowing sophisticated electrostatic manipulation of both the quantum dot environment and distant charge regions simultaneously. This multi-gate architecture is fully compatible with standard CMOS fabrication processes.
Solution Approach 2:
The vertical gates act as intermediaries between the control electronics and the charge regions far from the interfaces. By extending gates through the substrate, the invention creates direct electrostatic pathways to control and detect charges in regions that would otherwise be inaccessible to conventional lateral gate structures, while maintaining compatibility with industrial fabrication.
3Manufacturing precision
If heterojunction structures with low thermal budget are used, then defect-free interfaces are obtained, but integration into complete embedded SOC systems is more limited
Solution Approach 1:
The invention creates a universal platform that combines quantum dot control and charge detection functionalities within a single CMOS-compatible MOS structure. The dual-gate configuration can be integrated with various SOC components (processors, memory, communication interfaces) using standard fabrication processes, making the quantum device adaptable to different system architectures and applications while maintaining defect-free interfaces through conventional processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances electrostatic control of charge carriers, confines charges within the active zone, and facilitates integration into larger process flows, improving the production of MOS devices with side gates for quantum applications.
Implementation Method 1
first and second lateral gates electrically insulated from each other, and configured to electrostatically control a distribution of charge carriers in the semiconductor layer perpendicular to the z direction
Implementation Method 2
vertical gate... configured to electrostatically control the distribution of charge carriers in the semiconductor layer along the z direction
Implementation Method 3
filling of the at least one trench with a dielectric material
Data Source
Figure 1~2
Figure 3~4
Figure 5
AI summary
The invention relates to a method for manufacturing a qubit semiconductor device. The device comprises a semiconductor fin, side gates (14, G1, G2), and top gates (30). The method comprises: • etching of trenches (Fig. 2; 20, 21, 22), • deposition of an electrode layer (14) on the side of the trenches (Fig. 3), • filling with a dielectric material (15; Figures 3, 4). Advantageously, the side gate electrostatically controls the charge carrier distribution in a metal-oxide-semiconductor (MOS) structure, particularly for spin qubit applications.