MOS Regulator Circuit Without Voltage Reference for Low Power

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Solution Overview

Problem

Conventional Low Dropout Regulators (LDRs) face challenges in reducing overall power consumption, as reducing power consumption in the feedback control circuit has limited effect due to the inclusion of a voltage reference circuit.

Innovation Solution

A regulator circuit incorporating a mirror current source with depletion and enhancement MOS transistors, along with resistance and capacitance devices, which eliminates the need for a voltage reference circuit, achieving temperature stability and reducing power consumption by using the transistors' break-over currents.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a voltage reference circuit is included in the LDR to ensure stable operation, then reliability is improved, but power consumption increases

Engineering Contradiction:
Improvestable operationVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent removes the voltage reference circuit from the LDR structure, extracting the component that causes excessive power consumption while maintaining stable operation through alternative means (using the depletion MOS transistor's break-down voltage characteristics instead)

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The depletion MOS transistor's break-down voltage characteristics are utilized to provide self-regulation and stable operation without requiring an external voltage reference circuit, allowing the system to serve itself

Inventive Principle:
Principle #25Self-service

2Use of energy by moving object

If the power consumption of the feedback control circuit is reduced to lower overall LDR power consumption, then energy efficiency is improved, but temperature stability deteriorates

Engineering Contradiction:
Improvepower consumptionVSAvoidtemperature stability
Core Design Contradiction:
Use of energy by moving objectVSTemperature

Solution Approach 1:

The patent changes the operating parameters by utilizing the depletion MOS transistor's break-down voltage characteristics, which provide inherent temperature compensation. This allows low power consumption while maintaining temperature stability through the physical properties of the transistor rather than active feedback control

Inventive Principle:
Principle #35Parameter changes

3Temperature

If conventional LDR architecture with voltage reference circuit is used, then temperature stability is maintained, but device complexity and power consumption increase

Engineering Contradiction:
Improvetemperature stabilityVSAvoidcircuit structure
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The voltage reference circuit is extracted and removed from the LDR architecture, simplifying the device structure and reducing power consumption while maintaining temperature stability through the depletion MOS transistor's inherent characteristics

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The depletion MOS transistor serves multiple functions: it provides the break-down voltage reference, temperature compensation, and regulation control, eliminating the need for separate voltage reference and control circuits

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The circuit achieves substantial reduction in overall power consumption and maintains temperature stability without a voltage reference circuit, outperforming conventional LDRs in power efficiency.

Implementation Method 1

a second node of the first resistance device connected to a gate of the enhancement MOS transistor... achieving temperature stability and reducing power consumption by using the transistors' break-over currents

Methodology Applied
Scientific EffectBreakdown effect: Avalanche Breakdown

Data Source

PatentUS11068009B2Regulator circuit and manufacture thereof
Publication Date: 2021.07.20 SEMICON MFG INT (SHANGHAI) CORP
  • US11068009B2 patent drawing
  • US11068009B2 patent drawing
  • US11068009B2 patent drawing

AI summary

A regulator circuit and its manufacturing method are presented, relating to semiconductor technology. The regulator circuit comprises a mirror current source comprising two current output nodes; a depletion MOS transistor comprising a drain connected to one current output node of the mirror current source, a gate connected to the ground, and a source; an enhancement MOS transistor comprising a drain connected to the other current output node of the mirror current source, and a source connected to the ground; a first resistance device comprising a first node connected to the drain of the depletion MOS transistor, and a second node connected to a gate of the enhancement MOS transistor; and a second resistance device comprising a first node connected to the first resistance device, and a second node connected to the ground. This regulator circuit consumes less power than its conventional counterparts.