High Voltage MOS Device With Segmented Drift Regions
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Solution Overview
Problem
Prior art high voltage MOS devices have a large unit pitch, leading to high resistance per unit area, high manufacturing costs, and low device performance, limiting their application range.
Innovation Solution
The design features a high voltage metal oxide semiconductor (MOS) device with a reduced unit pitch, incorporating a first drift region, body region, plural second drift regions, a gate, source regions, drain, and body contact regions, arranged to minimize contact between second drift regions and optimize the depletion effect, allowing for higher operating voltage and reduced unit pitch.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the unit pitch of high voltage MOS device is reduced, then the resistance per unit area decreases and device performance improves, but the manufacturing precision requirements increase due to the need for precise separation of second drift regions from source and drain regions
Solution Approach 1:
The device structure is segmented into distinct regions: body region, second drift regions, source regions, and drain regions. The second drift regions are separated from both source and drain regions by the body region, creating clearly defined segments that reduce manufacturing precision requirements while maintaining low resistance per unit area
Solution Approach 2:
The body region acts as an intermediary element that separates the second drift regions from the source and drain regions. This intermediary structure prevents direct contact between second drift regions and source/drain, reducing manufacturing complexity and precision requirements while maintaining device performance
2Reliability
If the unit pitch of high voltage MOS device is reduced, then the resistance per unit area decreases, but the device complexity increases due to the need for multiple drift regions and their precise arrangement
Solution Approach 1:
The device is divided into multiple functional segments including body region, second drift regions, source regions, and drain regions. This segmentation allows for reduced unit pitch and lower resistance per unit area while maintaining manageable device complexity through clear functional separation
Solution Approach 2:
The body region serves multiple functions: it acts as a substrate for forming second drift regions, provides separation between source and drain regions, and enables the device to achieve both low resistance per unit area and controlled complexity through its multi-functional role
Data Source
AI summary
A high voltage MOS device includes: a first drift region with a first conductive type, a body region with a second conductive type, plural second drift regions with the second conductive type, a gate, a source region with the first conductive type, a drain with the first conductive type, and a body contact region with the second conductive type. The plural second drift regions contact the body region along the lateral direction, and are located separately in the width direction. Any neighboring two second drift regions do not contact each other. Each of the second drift regions is separated from the drain by the first drift region.