MOS Transistor Quantum Interference Protrusion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing MOS transistors do not effectively utilize quantum interference effects to control current flow, limiting their efficiency in modulating electron passage through potential barriers.
Innovation Solution
A MOS transistor with a semiconductor source-drain electrode featuring a protrusion of specific dimensions, where Quantum Interference Depression (QID) creates a locally increased Fermi level, forming a gate voltage-regulated potential energy barrier that controls current flow by altering the effective dimensions of the protrusion through charge depletion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional MOS transistor structure is used, then device simplicity is maintained, but quantum interference effects are not utilized to control current flow
Solution Approach 1:
The patent introduces a localized protrusion structure on the semiconductor surface with specific dimensions (width w, depth d) to create quantum interference effects only in the channel region, while maintaining conventional structure elsewhere. This localized modification enables quantum control without requiring complete structural redesign of the transistor.
2Reliability
If protrusion dimensions are increased to enhance QID effect, then Fermi level increase and potential barrier formation are improved, but device manufacturing precision requirements increase
Solution Approach 1:
The patent establishes specific parameter ranges for the protrusion structure (width w = 5-50 nm, depth d = 2-20 nm) to optimize quantum interference effects. By defining these parameter ranges, the invention balances the need for strong QID effect with manufacturability, allowing reliable current control through gate voltage modulation while maintaining feasibility for standard fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise modulation of current flow by adjusting the potential energy barrier height, enhancing control over electron passage and current magnitude based on the degree of QID and gate voltage application.
Implementation Method 1
QID is based on electron de Broglie wave interference due to special geometry of a solid. Quantum interference causes some quantum states inside the solid to become forbidden, as a result of which the Fermi energy level increases.
Implementation Method 2
electron de Broglie wave interference
Implementation Method 3
The application of a gate voltage of appropriate size and polarity causes charge depletion in the protrusion, thereby changing the effective height of the protrusion and thus altering QID.
Data Source
AI summary
A new type of Metal Oxide Semiconductor (MOS) transistor that works on the basis of the Quantum Interference Depression (QID) effect is disclosed. QID occurs inside an n-type semiconductor source-drain electrode of special geometry. Due to QID the Fermi level of said semiconductor increases locally inside the source drain electrode, thereby creating a localized potential energy barrier in the path of electrons moving from source to drain regions. The height of the barrier depends on the degree of QID. QID is in turn regulated by the gate voltage via the charge depletion and hence change in effective dimensions of the special geometry of the semiconductor electrode. A gate voltage modulated potential energy barrier and is thus formed whereby current in said MOS transistor is controlled.