Power MOS Transistor Die with Integrated Temperature Sensing
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Solution Overview
Problem
Conventional integrated circuits with temperature sensing functions fail to accurately sense the highest temperature in power MOS transistor dies, leading to potential overheating and damage due to the placement of temperature sensors in controller dies rather than in the regions with the highest temperature.
Innovation Solution
Incorporating a temperature sensing part within the power MOS transistor die, configured as a MOS transistor using the same manufacturing process, allowing for precise temperature sensing and protection without altering the existing manufacturing process, and enabling simultaneous conduction with the controller die for effective temperature monitoring and protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the temperature sensor is configured in the controller die, then the IC structure remains simple, but the temperature sensing precision deteriorates because the sensor cannot detect the highest temperature in the power MOS transistor die
Solution Approach 1:
The patent merges the temperature sensing function into the power MOS transistor die by integrating a temperature sensing part (comprising a sensing electrode, intermediate electrode, and reference electrode) directly into the power MOS die structure. This allows the temperature sensor to be located at the highest temperature region (the power MOS die) rather than in the controller die, thereby improving temperature sensing precision while maintaining relatively simple IC structure through process integration rather than structural complexity
Solution Approach 2:
The patent introduces an intermediate electrode that couples the temperature sensing part to the phase terminal, serving as a mediator to transmit temperature-related signals from the power MOS transistor die to the controller die. This intermediary structure enables accurate temperature detection at the heat-generating component while still allowing control functions to be performed by the controller die
2Measurement precision
If a separate temperature sensor is added to the power MOS transistor die, then the temperature sensing precision improves, but the manufacturing process complexity increases
Solution Approach 1:
The temperature sensing part is merged with the power MOS transistor die using the same manufacturing process. The sensing electrode, intermediate electrode, and reference electrode are formed as integral parts of the power MOS die structure through standard semiconductor fabrication techniques, eliminating the need for separate sensor fabrication and simplifying the overall manufacturing process
Solution Approach 2:
The power MOS transistor die is designed to serve multiple functions: it acts as both the power switching component and the temperature sensing component. The same die structure and manufacturing process produce both the power MOS transistor and the temperature sensing part, achieving multi-functionality without requiring separate manufacturing lines or complex process integration
3Measurement precision
If the temperature sensing part is integrated within the power MOS transistor die, then the circuit area increases, but the temperature protection precision improves
Solution Approach 1:
The temperature sensing part is implemented using local structures within the power MOS transistor die. The sensing electrode, intermediate electrode, and reference electrode are positioned in specific locations (such as utilizing the body diode structure and adjacent regions) to detect temperature at the critical heat-generating areas, achieving precise local temperature measurement without requiring extensive additional circuit area
Solution Approach 2:
The temperature sensing part is nested within the existing power MOS transistor die structure. The sensing electrodes and reference electrodes are positioned to utilize available spaces and structures within the power MOS die, such as nesting the temperature sensing function within the body diode region and adjacent areas, thereby minimizing the additional area required while achieving accurate temperature sensing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances temperature protection precision, prevents overheating damage, and maintains a simple structure while avoiding increased circuit area, as the temperature sensing part is integrated within the power MOS transistor die, accurately sensing temperature changes and providing effective protection against overheating.
Implementation Method 1
The PN junction would generate different voltage in accordance with different temperature
Data Source
AI summary
A power metal oxide semiconductor (MOS) transistor die with a temperature sensing function and an integrated circuit are provided. The power MOS transistor die has a control terminal, a phase terminal, a ground terminal and a temperature signal output terminal, and that further includes a power switch part and a temperature sensing part. The power switch part has: a first electrode coupled to the control terminal; a second electrode coupled to the ground terminal; and a third electrode coupled to the phase terminal. The temperature sensing part has: a first electrode; a second electrode coupled to the temperature signal output terminal; and a third electrode coupled to the third electrode of the power switch part. The power switch part and the temperature sensing part are configured as a MOS transistor made by a same manufacturing process, and are capable of sensing temperature precisely.