Single MOS Transistor Voltage Regulation with Intrinsic Diode Protection
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Solution Overview
Problem
Existing voltage regulation systems for automotive applications face challenges in protecting against short circuits while maintaining low manufacturing costs, as they either fail to prevent damage from short circuits or incur increased heat generation and silicon usage due to additional transistors.
Innovation Solution
A voltage regulation system utilizing a single MOS power transistor with an intrinsic diode oriented to block current flow, reducing silicon consumption and eliminating the need for additional transistors, with a pre-regulator configured to provide a pre-regulation voltage below the threshold of the functional component's voltage plus the diode's forward voltage, and a control device using an operational amplifier to adjust the pre-regulation voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If two power transistors are placed in series in a back to back arrangement to protect against short circuits, then protection against short circuits is improved, but internal resistance increases and heat generation increases
Solution Approach 1:
The patent extracts only the essential protective function from the two-transistor arrangement. By using a single power transistor with its intrinsic diode oriented to block reverse current, the solution removes the redundant second transistor while maintaining short-circuit protection. This extraction reduces the total internal resistance and associated heat generation while preserving the critical protection function.
2Reliability
If two power transistors are placed in series in a back to back arrangement to protect against short circuits, then protection against short circuits is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent extracts only the essential protective function from the two-transistor arrangement. By using a single power transistor with its intrinsic diode oriented to block reverse current, the solution removes the redundant second transistor while maintaining short-circuit protection. This extraction reduces device complexity and manufacturing cost while preserving the critical protection function.
3Device complexity
If a single power transistor is used for voltage adaptation, then device complexity is reduced, but protection against short circuits is lost
Solution Approach 1:
The patent applies inversion by using the intrinsic diode of the power transistor in its reverse orientation relative to conventional operation. Instead of connecting transistors in a conventional forward-bias configuration, the diode is oriented to block reverse current flow from the functional port to the pre-regulation port. This inverted usage of the intrinsic diode provides short-circuit protection while maintaining a simple single-transistor structure.
4Reliability
If the pre-regulation voltage is set below the threshold of functional component voltage plus diode forward voltage, then protection against short circuits is improved, but voltage adaptation range is limited
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the pre-regulation voltage level based on the operational state. The pre-regulator modifies its output voltage parameter to ensure it remains below the threshold of functional component voltage plus diode forward voltage during normal operation, thereby enabling the intrinsic diode to provide protection while maintaining adequate voltage adaptation capability through controlled parameter variation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively protects against short circuits while minimizing silicon usage and manufacturing costs, offering a compact and adjustable regulation system that meets the needs of various functional components.
Implementation Method 1
the MOS power transistor comprises an intrinsic diode, between its drain and its source, which is oriented so as to block the flow of a current between said functional port and said pre-regulation port
Data Source
AI summary
A voltage regulation system, particularly for a motor vehicle, adapted to be connected to a voltage source in order to provide a regulated voltage Vdd to at least one functional component F, the regulation system including a pre-regulator adapted to be connected to a voltage source and a regulator REG including at least one pre-regulation port PPR adapted to be connected to the pre-regulator and one functional port Pdd adapted to be connected to a functional component, the regulator including an adaptation device Q directly connecting the pre-regulation port to the functional port of the regulator, the adaptation device consisting of a single MOS power transistor including a drain D, a source S and a gate G. The MOS transistor includes an intrinsic diode DIODE between its drain and its source which is oriented to block the flow of a current between the functional port and the pre-regulation port.