MOS UV Light Emitter Structure Without P-Type AlGaN
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Solution Overview
Problem
Conventional ultraviolet (UV) light emitters using P-type AlGaN materials suffer from low conductivity and low light extraction efficiency due to the high activation energy of acceptor species and incompatibility with highly reflective materials for Ohmic connections, resulting in operational efficiencies less than 5%.
Innovation Solution
The use of a semiconductor structure with a bulk material like N-type AlGaN and a spacer, such as GaN or AlGaN, with a dielectric material between conductive contacts, and a waveform generator to apply bias signals that reverse and forward bias the light emitter, allowing for higher conductivity and light extraction efficiency without P-type AlGaN, thereby enhancing UV light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If P-type AlGaN is used in UV light emitters, then the device structure can be formed, but the conductivity is low and light extraction efficiency is low due to high activation energy and incompatibility with highly reflective materials
Solution Approach 1:
The patent removes P-type AlGaN from the device structure entirely, extracting the problematic material that caused low conductivity and low light extraction efficiency. The invention replaces it with an n-type AlGaN-based structure that avoids these issues while maintaining the light emitting function.
Solution Approach 2:
The patent changes the doping type parameter from P-type to n-type in the AlGaN material, fundamentally altering the electrical properties. This parameter change enables compatibility with highly reflective materials for Ohmic connections and achieves light extraction efficiency greater than 5%, resolving the conductivity and light extraction efficiency problems.
2Ease of manufacture
If P-type AlGaN is used to form the semiconductor structure, then the device can operate, but it is not compatible with highly reflective materials for Ohmic connections
Solution Approach 1:
The patent extracts/removes P-type AlGaN from the structure, eliminating the material incompatibility issue. By replacing it with n-type AlGaN, the invention achieves compatibility with highly reflective materials needed for effective Ohmic connections, thereby improving both manufacturability and connection performance.
Solution Approach 2:
The patent employs a composite structure combining n-type AlGaN with highly reflective materials that are compatible with n-type doping. This composite approach enables effective Ohmic connections while maintaining structural integrity and electrical performance, resolving the material compatibility contradiction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases conductivity and light extraction efficiency, achieving UV light emission with improved operational efficiency beyond conventional UV light emitters.
Implementation Method 1
In operation, a voltage applied across the electrodes generates electron/hole pairs in the active regions of the LED structure 102. When these pairs recombine, energy is released, including energy in the form of emitted light.
Data Source
AI summary
Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.