MOS Voltage Divider With Dynamic Impedance Control
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Solution Overview
Problem
Conventional resistor-based voltage dividers in integrated circuits face challenges such as large surface area requirements and resistance variability with temperature and process changes, while MOS-based voltage dividers using gate tunneling currents are not robust due to dependency on technology, voltage, and temperature, and often require specialized devices not commonly available in CMOS technologies.
Innovation Solution
The development of Metal-Oxide-Semiconductor (MOS) voltage dividers with dynamic impedance control using standard MOS transistors operating in triode or saturation modes, where impedance is dynamically controlled through separate control inputs, allowing for improved area/power consumption ratio and flexibility in low-power applications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If resistor-based voltage dividers are used in integrated circuits, then voltage division function is achieved, but large surface area is required and resistance varies with temperature and process changes
Solution Approach 1:
The patent changes the fundamental operating parameters by using MOS transistors in triode or saturation modes instead of resistors, enabling voltage division through controlled channel resistance that is less sensitive to temperature and process variations. The transistor operating point can be dynamically adjusted to maintain stable division ratios
Solution Approach 2:
The MOS transistor serves multiple functions: it acts as a variable resistor for voltage division, a controlled impedance element, and can be dynamically adjusted through gate voltage control. This multi-functionality replaces the need for large fixed resistors while providing temperature-compensated operation
2Area of stationary object
If MOS transistors operating in gate tunneling mode are used for voltage division, then smaller area is achieved, but the solution lacks robustness and portability due to high dependency on technology, voltage, and temperature
Solution Approach 1:
The patent employs dynamic control of MOS transistor operating modes, switching between triode and saturation modes based on control voltages. This dynamic operation allows the circuit to maintain robust performance across different technology nodes and temperature conditions by adjusting the transistor operating point
Solution Approach 2:
By changing the operating parameters of MOS transistors from gate tunneling mode to triode/saturation modes with controlled gate voltages, the patent achieves more predictable and robust voltage division that is less sensitive to process variations and temperature changes while maintaining compact area
3Adaptability or versatility
If special devices such as depletion-mode FET transistors or double-gate FET transistors are used, then voltage division with dynamic control is achieved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent achieves dynamic control functionality using standard enhancement-mode MOS transistors that are universally available in CMOS technologies. The same transistor type performs both static and dynamic control functions, eliminating the need for special devices while maintaining manufacturing compatibility
Solution Approach 2:
Instead of using special devices (depletion-mode or double-gate FETs) to achieve dynamic control, the patent inverts the approach by using standard MOS transistors with dynamically adjusted gate voltages to achieve the same control capability, thereby simplifying manufacturing
Data Source
AI summary
Metal-Oxide-Semiconductor (MOS) voltage divider with dynamic impedance control. In some embodiments, a voltage divider may include two or more voltage division cells, each voltage division cell having a plurality of Metal-Oxide-Semiconductor (MOS) transistors, a least one of the plurality of MOS transistors connected to a signal path and at least another one of the plurality of MOS transistors connected to a control path, the voltage division cell configured to provide a voltage drop across the signal path based upon a control signal applied to the control path.