MoS2 Quantum Dot Photodetector Resolving Gain-Current Tradeoff

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Solution Overview

Problem

Existing optoelectronic platforms face challenges in achieving high responsivity while maintaining low dark current levels and broad spectral coverage, particularly in photodetectors and photovoltaic cells.

Innovation Solution

An optoelectronic apparatus comprising a 2-dimensional semiconductor transport layer and a photosensitizing layer with colloidal quantum dots, along with a dielectric and substrate layer, is developed to enhance responsivity and spectral coverage, featuring a structure that includes electrodes and a bias voltage tunable substrate to manage conductivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a semi-metallic carbon based conductor (graphene) transport layer is used to achieve high photoconductive gain, then the photoconductive gain is improved, but the dark current level increases

Engineering Contradiction:
Improvephotoconductive gainVSAvoiddark current level
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent uses a composite structure combining MoS2 (2D semiconductor) transport layer with quantum dot sensitizing layer. This composite approach leverages the bandgap properties of MoS2 to suppress dark current while maintaining high photoconductive gain through the quantum dot sensitization mechanism, resolving the contradiction between gain and dark current.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent changes the material parameter of the transport layer from semi-metallic graphene to 2D semiconductor MoS2 with a controllable bandgap. This parameter change enables tuning of the dark current level while preserving high photoconductive gain through the quantum dot sensitizing mechanism.

Inventive Principle:
Principle #35Parameter changes

2Object-generated harmful factors

If 2-dimensional semiconductors (MoS2) are used as transport layer to reduce dark current, then the dark current level is improved, but the spectral coverage is limited

Engineering Contradiction:
Improvedark current levelVSAvoidspectral coverage
Core Design Contradiction:
Object-generated harmful factorsVSAdaptability or versatility

Solution Approach 1:

The patent introduces quantum dots as an intermediary sensitizing layer between the light source and the MoS2 transport layer. The quantum dots absorb light across a broad spectral range and transfer energy to the MoS2, enabling extended spectral coverage while MoS2 maintains low dark current levels.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The hybrid composite structure of MoS2 transport layer with quantum dot sensitizing layer combines the advantages of both materials: MoS2 provides low dark current and high mobility, while quantum dots provide broad spectral absorption, achieving both low dark current and extended spectral coverage.

Inventive Principle:
Principle #40Composite materials

3Speed

If graphene transport layer is used to achieve high mobility, then the carrier mobility is improved, but the sensitivity and shot-noise limit are degraded

Engineering Contradiction:
Improvecarrier mobilityVSAvoidsensitivity and shot-noise limit
Core Design Contradiction:
SpeedVSMeasurement precision

Solution Approach 1:

The patent changes the transport layer material from graphene to MoS2, utilizing the bandgap parameter of MoS2 to suppress dark current. This parameter change improves sensitivity and shot-noise limit while MoS2 maintains sufficiently high carrier mobility for effective charge transport.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution achieves enhanced responsivity at low dark current levels and extended spectral coverage, outperforming previous technologies in terms of sensitivity and spectral range, with experimental results showing significant improvements in responsivity and detectivity.

Implementation Method 1

Light absorption at an active layer triggers the separation of electron-hole pairs

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Implementation Method 2

Upon reception of incident light at the photosensitizing layer, an electric current between the first electrode and the second electrode is hence created through the transport layer

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 3

free electrons circulating through a transport layer driven by an electric field applied by electrodes

Methodology Applied
Scientific EffectElectric field driven transport: Electric Field

Implementation Method 4

In view of the high mobility of graphene and long lifetime of carriers in the quantum dots, a large photoconductive gain was achieved

Methodology Applied
Scientific EffectHigh mobility transport: Conduction (electrical)

Implementation Method 5

the substrate is connected to a third electrode, therefore enabling to tune the conductivity of the transport by applying a bias voltage to said third electrode

Methodology Applied
Scientific EffectField effect modulation: Electric Field

Data Source

PatentUS11527662B2Optoelectronic apparatus with a photoconductive gain
Publication Date: 2022.12.13 FUNDACIO INST DE CIENCIES FOT NIQUES
  • US11527662B2 patent drawing
  • US11527662B2 patent drawing
  • US11527662B2 patent drawing

AI summary

An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor layer (3), such as MoS2, and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.