MOSCAP-Coupled Input Offset Detection Amplifier for Memory Sensing

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Solution Overview

Problem

Conventional input/output sense amplifier (IOSA) circuits face issues with decreased sensing yield due to process, voltage, and temperature variations, leading to increased power consumption and circuit area, and require large voltage swings for robust detection.

Innovation Solution

The proposed IOSA circuit directly connects the input to the source of a P-type metal oxide-semiconductor (PMOS) and uses a small metal-oxide-semiconductor capacitor (MOSCAP) between the gates of two PMOS transistors, allowing for simultaneous input phases and reducing offset cancellation time.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional IOSA circuits are used with traditional configurations, then sensing yield is maintained under normal conditions, but sensing yield decreases as offset increases due to PVT variations and circuit area increases

Engineering Contradiction:
Improvesensing yieldVSAvoidcircuit area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The circuit is segmented into distinct functional blocks: a first IOSA circuit for sensing and a second IOSA circuit for offset cancellation. This segmentation allows each circuit to be optimized independently, reducing the overall area required while maintaining sensing yield through specialized functionality in each segment.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Offset cancellation is performed as a preliminary action before main sensing operations. The second IOSA circuit pre-cancels offsets by sensing and correcting mismatch voltages in advance, which improves the reliability of subsequent sensing operations without requiring larger circuit area for the main sensing function.

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If IOSA circuits use traditional amplification configurations, then detection robustness is achieved, but power consumption increases due to large voltage swings required in GIO lines

Engineering Contradiction:
Improvedetection robustnessVSAvoidpower consumption
Core Design Contradiction:
Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The circuit employs dynamic switching between different operational modes using control signals (OC_EN, SEN_EN). The IOSA circuits can dynamically transition between offset cancellation mode and main sensing mode, allowing robust detection only when necessary while minimizing power consumption during normal operations through selective activation.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The circuit changes operational parameters by using different transistor configurations and connection topologies depending on the mode. During offset cancellation, the second IOSA circuit uses a configuration optimized for small signal detection, while the first IOSA circuit uses a configuration optimized for main sensing, thereby reducing overall power consumption while maintaining detection robustness.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If offset cancellation is performed using traditional methods, then offset correction is achieved, but sensing time increases due to sequential operation requirements

Engineering Contradiction:
Improveoffset correctionVSAvoidsensing time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The offset cancellation function and main sensing function are merged into a unified circuit architecture where the first and second IOSA circuits share common components and operational pathways. This merging allows offset correction and sensing to be performed in an integrated manner, reducing the total sensing time while maintaining offset correction reliability through coordinated operation of both circuits.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS20250239297A1Input offset detection amplification circuit and semiconductor memory device including same
Publication Date: 2025.07.24 UI (UNIVERSITY IND FOUNDATION) YONSEI UNIVERSITY
  • US20250239297A1 patent drawing
  • US20250239297A1 patent drawing
  • US20250239297A1 patent drawing

AI summary

According to various embodiments of the present invention, an input/output sense amplifier circuit in a sense amplifier circuit includes a 1-1 transistor having a source connected to a first global input/output line, a 1-2 transistor having a source connected to a second global input/output line, and a metal-oxide-semiconductor capacitor (MOSCAP) configured to connect a gate of the 1-1 transistor to a gate of the 1-2 transistor.