MOSFET Active Pattern Layout With Backbone for High Integration
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Solution Overview
Problem
As semiconductor devices shrink in size, the operating characteristics of MOSFETs deteriorate due to high integration density, necessitating improvements in integration and performance.
Innovation Solution
A semiconductor device design featuring a first active pattern with varying sidewall distances and a backbone structure, including channel patterns, gate electrodes, and source/drain patterns, which are configured to enhance electrical characteristics and integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If MOSFET sizes are reduced to increase integration density, then integration is improved, but operating characteristics deteriorate
Solution Approach 1:
The patent applies local quality by creating a non-uniform active pattern where the width varies in different regions. Specifically, the active pattern has a first width in a first region and a second width in a second region, with the width changing gradually between regions. This local variation allows optimization of electrical characteristics in specific areas while maintaining high integration density overall, resolving the contradiction between miniaturization and performance degradation.
2Reliability
If active pattern width is varied to improve electrical characteristics, then operating characteristics are improved, but manufacturing complexity increases
Solution Approach 1:
The patent implements dynamics by creating a continuously varying active pattern width rather than abrupt changes. The active pattern width transitions gradually from the first width in the first region to the second width in the second region, forming a dynamic profile that optimizes electrical characteristics while avoiding the manufacturing complexity of discrete width steps or sharp transitions.
Data Source
AI summary
A semiconductor device may include a first active pattern on a substrate, channel patterns on the first active pattern, a gate electrode extending in a first direction on the first active pattern, and a backbone structure extending in a second direction intersecting the first direction. The first active pattern includes a first region and a second region spaced apart in the second direction, the first active pattern includes a first active sidewall in direct contact with the backbone structure and a second active sidewall spaced apart from the first active sidewall in the first direction, and a distance between the first active sidewall and the second active sidewall in the first direction varies as the first active pattern extends from the first region toward the second region.