MOSFET Back Bias Inherent BJT Drain Current
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Solution Overview
Problem
Conventional MOSFETs do not effectively utilize the inherent bipolar junction transistor (BJT) to enhance performance, leading to underutilization of on-state drain current potential and increased power consumption due to unchanged off-state drain current.
Innovation Solution
A semiconductor device structure and method that leverages the inherent BJT by varying the voltage applied to the buried layer to switch between MOSFET operation and memory cell operation with increased on-state drain current and reduced operating voltage, maintaining unchanged off-state drain current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the inherent BJT is utilized to enhance MOSFET performance, then on-state drain current is increased, but off-state drain current remains unchanged leading to increased power consumption
Solution Approach 1:
The patent applies reverse bias voltage to the body terminal of the MOSFET to modify the potential distribution in the channel region. This parameter change activates the inherent BJT effect during on-state operation, increasing drain current, while maintaining control over off-state leakage through selective biasing conditions.
Solution Approach 2:
The body terminal serves as an intermediary element that, when reverse-biased, modulates the interaction between the MOSFET channel and the inherent BJT structure. This intermediary biasing mechanism enables selective enhancement of on-state current without proportionally increasing off-state leakage.
2Adaptability or versatility
If reverse bias is applied to the body terminal to activate inherent BJT, then device functionality is enhanced, but device complexity increases
Solution Approach 1:
The patent leverages the inherent BJT structure that already exists in conventional MOSFET manufacturing processes. By applying reverse bias to the body terminal, the same device structure serves dual functions: standard MOSFET operation and enhanced BJT-assisted operation, without requiring additional components or manufacturing steps.
Solution Approach 2:
The inherent BJT structure within the MOSFET is self-utilized through the reverse-biased body terminal. The device's own internal structure provides the enhancement mechanism, eliminating the need for external circuitry or additional components to activate the BJT effect.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances on-state drain current while maintaining consistent off-state drain current, achieving improved performance and reduced power consumption by effectively utilizing the inherent BJT and adjusting voltage levels.
Implementation Method 1
reverse bias applied to a body terminal
Implementation Method 2
inherent bipolar junction transistor (BJT) formed during manufacture of the MOSFET
Data Source
AI summary
A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.