3D MOSFET Channel Structure With Barrier Layer for Leakage Control
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Solution Overview
Problem
The challenge of reducing the size of Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) devices while maintaining high integration density and functionality is addressed by developing a semiconductor device with a three-dimensional channel structure and a barrier layer to prevent impurity diffusion and leakage currents.
Innovation Solution
A semiconductor device with a barrier layer between the active region and semiconductor layers, comprising a crystalline material doped with barrier impurities, is designed to prevent impurity diffusion and enhance leakage current characteristics, featuring a three-dimensional channel structure with a gate structure covering the semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of MOSFET devices is reduced to increase integration density, then integration density is improved, but leakage current increases and impurity diffusion occurs
Solution Approach 1:
A barrier layer is introduced as an intermediary component between the active region and the semiconductor layer. This barrier layer specifically blocks impurity diffusion while maintaining electrical isolation, thereby preventing leakage current without compromising integration density. The barrier layer acts as a mediator that resolves the conflict between device miniaturization and electrical performance.
Solution Approach 2:
The semiconductor device employs a composite structure consisting of multiple materials with different properties: the barrier layer (with high impurity blocking capability), the active region, and the semiconductor layer. This composite material approach allows each layer to perform its specific function, enabling high integration density while maintaining low leakage current through the synergistic combination of materials.
2Productivity
If the size of MOSFET devices is reduced to increase integration density, then integration density is improved, but impurity diffusion between regions increases
Solution Approach 1:
The barrier layer serves as an intermediary barrier that physically separates the active region from the semiconductor layer, preventing impurity diffusion between these regions. This mediator structure maintains sharp impurity distribution profiles even as device dimensions are reduced for higher integration density.
Solution Approach 2:
The harmful impurity diffusion process is extracted and blocked by the barrier layer. The barrier layer specifically targets and prevents the unwanted movement of impurities between regions, allowing the device to achieve high integration density without compromising impurity distribution stability.
3Reliability
If a barrier layer is added to prevent impurity diffusion and reduce leakage current, then leakage current characteristics are improved, but device complexity increases
Solution Approach 1:
The semiconductor device is segmented into distinct functional layers: the active region, the barrier layer, and the semiconductor layer. This segmentation allows each layer to perform its specific function efficiently. The barrier layer, though adding a structural element, provides disproportionate value by simultaneously addressing impurity diffusion and leakage current issues.
Solution Approach 2:
The barrier layer is a relatively simple intermediary structure that provides multiple benefits (impurity blocking and leakage current reduction) without requiring complex architecture. Its simplicity as a mediator layer means it adds minimal structural complexity while significantly improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The barrier layer improves integration density, functionality, and leakage current characteristics, enhancing the overall operating characteristics of the semiconductor device by blocking impurity diffusion and reducing leakage currents.
Implementation Method 1
a barrier layer on the active region... the barrier layer is disposed between the gate structure and the active region... to prevent impurity diffusion
Implementation Method 2
a barrier epitaxial material layer epitaxially grown from an upper surface of the well region; a lower epitaxial semiconductor layer epitaxially grown from an upper surface of the barrier epitaxial material layer
Data Source
AI summary
A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.