MOSFET Buffer Circuit for Drive Scaling Without Electromigration Loss
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Solution Overview
Problem
Existing oscillation circuits face issues with electromigration resistance when changing drive capability, as the width of the current path decreases, leading to reliability concerns.
Innovation Solution
A buffer circuit design that maintains the width of the current path and electromigration resistance by using a configuration of MOSFETs with shared drain electrodes and strategically connected gate electrodes, allowing for reliable operation even when drive capability is changed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the number of MOSFET circuits through which current flows is changed to adjust drive capability, then the drive capability is changed, but the width of the current path decreases and electromigration resistance decreases
Solution Approach 1:
The patent divides the current path into multiple parallel segments by connecting multiple MOSFET circuits in parallel. When drive capability needs to be reduced, fewer MOSFETs are activated rather than reducing the physical current path width. This segmentation allows independent control of each MOSFET while maintaining the overall current path structure, thereby adjusting drive capability without compromising electromigration resistance of the interconnections.
2Reliability
If the width of the current path is maintained, then electromigration resistance is maintained, but the drive capability cannot be changed
Solution Approach 1:
The patent implements dynamic control of drive capability by selectively activating or deactivating individual MOSFET circuits through control signals. The physical current path width remains constant as all MOSFETs are connected in parallel with uniform interconnection width, but the effective drive capability varies dynamically based on how many MOSFETs are turned on. This dynamic switching mechanism allows adaptability without compromising the static electromigration resistance of the interconnections.
Data Source
AI summary
A buffer circuit includes a first MOSFET including a first source electrode, a first gate electrode, and a first drain electrode, and a second MOSFET, which includes a second source electrode, a second gate electrode, and a second drain electrode, and is same in polarity as the first MOSFET, and the first gate electrode and the second gate electrode are electrically connected to each other.