MOSFET Active Contact Buffer Layer for Precise Etching
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high reliability, performance, and integration density, particularly in field effect transistors, which limits their multifunctional and cost-effective applications.
Innovation Solution
The semiconductor device design includes a substrate with PMOSFET and NMOSFET regions, a device isolation layer, gate electrodes, source/drain patterns, interlayer insulating layers, and buffer layers with etch selectivity, allowing for improved electrical connections and reduced parasitic capacitance, enhancing the device's operational speed and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the active contacts are directly connected to the source/drain patterns without a buffer layer, then the manufacturing process is simpler, but the parasitic capacitance increases and etching precision deteriorates
Solution Approach 1:
A buffer layer is introduced between the active contacts and the interlayer insulating layer. This intermediary layer serves multiple functions: it provides etch selectivity to prevent over-etching of the interlayer insulating layer, reduces parasitic capacitance between the active contacts and the insulating layer, and improves the overall electrical performance of the device without significantly complicating the manufacturing process
Solution Approach 2:
The buffer layer changes the etching parameters by providing a material with different etch selectivity than the interlayer insulating layer. This allows for precise control of the etching depth, ensuring that the active contacts are properly formed without damaging the underlying structures, thereby improving manufacturing precision and electrical performance
2Manufacturing precision
If the buffer layer is not provided, then the manufacturing process is faster, but the etching precision of the interlayer insulating layer deteriorates
Solution Approach 1:
The buffer layer acts as an intermediary that protects the interlayer insulating layer during the etching process. By providing a material with distinct etch selectivity, it enables precise etching of the active contacts while preventing damage to the insulating layer, thereby improving manufacturing precision without significantly extending the overall process time
Solution Approach 2:
The buffer layer is deposited in advance before the etching process. This preliminary action prepares the structure for precise etching by creating a protective interface that allows for controlled removal of material, ensuring that the subsequent etching step achieves the desired precision without requiring additional protective measures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves electrical performance by reducing resistance and parasitic capacitance, leading to faster operating speeds and increased reliability in semiconductor devices.
Implementation Method 1
a buffer layer provided in an upper region of the interlayer insulating layer and interposed between the first active contact and the second active contact, wherein the buffer layer includes a material having etch selectivity with respect to the interlayer insulating layer
Data Source
AI summary
A semiconductor device includes a first active (e.g., PMOSFET) region and an adjacent second active (e.g., NMOSFET) region on a substrate, a device isolation layer on the substrate and defining a first active pattern on the first active region and a second active pattern on the second active region, a gate electrode crossing the first and second active patterns, a first source/drain pattern and a second source/drain pattern adjacent to a side of the gate electrode, an interlayer insulating layer on the gate electrode, a first active contact penetrating the interlayer insulating layer to connect the first source/drain pattern and a second active contact penetrating the interlayer insulating layer to connect the second source/drain pattern and a buffer layer provided in an upper region of the interlayer insulating layer and interposed between the first active contact and the second active contact, wherein the buffer layer includes a material having etch selectivity with respect to the interlayer insulating layer.