MOSFET Dislocation Planes for Drive Current
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current MOSFET technologies face challenges in effectively inducing tensile and compressive stresses in channel regions to enhance carrier mobility, which affects the performance of n-type and p-type MOS devices.
Innovation Solution
The formation of multiple dislocation planes in the channel region of MOSFETs through pre-amorphization implantation and subsequent annealing with strained capping layers, which introduces and memorizes stress, thereby increasing channel stress and improving drive current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple dislocation planes are formed through pre-amorphization implantation and annealing, then channel stress is increased and drive current is improved, but device complexity and manufacturing process complexity increase
Solution Approach 1:
The patent applies preliminary action by performing pre-amorphization implantation before forming the dislocation planes. This preliminary step modifies the crystal structure in advance, enabling subsequent annealing to generate multiple dislocation planes more effectively. The pre-amorphization creates a controlled amorphous region that, when annealed, produces the desired multiple dislocation planes with optimized stress distribution in the channel region.
Solution Approach 2:
The patent employs parameter changes by varying the annealing temperature, implantation dose, and capping layer composition to control the formation of multiple dislocation planes. By adjusting these parameters, the process optimizes the number and orientation of dislocation planes to achieve maximum channel stress while managing device complexity. The strained capping layer composition is specifically tuned to induce appropriate stress levels during the annealing process.
2Reliability
If multiple dislocation planes are formed to increase channel stress, then carrier mobility is enhanced, but manufacturing process complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the stress induction process into distinct stages: pre-amorphization implantation, annealing, and strained capping layer formation. Each stage contributes to creating dislocation planes at specific locations and orientations. This segmented approach allows precise control over the number and distribution of dislocation planes, enhancing carrier mobility while managing manufacturing complexity through systematic process breakdown.
Solution Approach 2:
The patent uses strained capping layers as an intermediary to transfer stress to the channel region during annealing. The capping layer acts as a mediator that, when strained, induces the formation of dislocation planes in the underlying semiconductor material. This intermediary mechanism enables controlled stress introduction without requiring direct mechanical intervention, simplifying the overall manufacturing process while achieving the desired carrier mobility enhancement.
3Reliability
If hydrogen is incorporated in strained capping layers to optimize stress distribution, then performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies parameter changes by incorporating hydrogen into the strained capping layer to modify its stress characteristics. The hydrogen content and distribution are controlled to optimize stress distribution across the dislocation planes. This parameter adjustment enhances device performance by ensuring uniform stress fields, while the manufacturing precision requirements are managed through established semiconductor fabrication techniques for controlled hydrogen incorporation during deposition processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively increases channel stress, enhancing the drive current of MOSFETs, with the number of dislocation planes correlating to increased stress levels, and incorporating hydrogen in strained capping layers further optimizes stress distribution and tilt angles for improved performance.
Implementation Method 1
The formation of multiple dislocation planes in the channel region of MOSFETs through pre-amorphization implantation and subsequent annealing with strained capping layers, which introduces and memorizes stress
Implementation Method 2
subsequent annealing with strained capping layers, which introduces and memorizes stress
Implementation Method 3
incorporating hydrogen in strained capping layers further optimizes stress distribution and tilt angles for improved performance
Data Source
AI summary
A method includes forming a metal-oxide-semiconductor field-effect transistor (MOSFET). The Method includes performing an implantation to form a pre-amorphization implantation (PAI) region adjacent to a gate electrode of the MOSFET, forming a strained capping layer over the PAI region, and performing an annealing on the strained capping layer and the PAI region to form a dislocation plane. The dislocation plane is formed as a result of the annealing, with a tilt angle of the dislocation plane being smaller than about 65 degrees.