2D MOSFET Drain Contact Layout for Central Heat Suppression
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Solution Overview
Problem
As semiconductor device integration increases, so does current density, leading to potential damage from temperature rises, particularly in the central portion of the element region, where heat generation is higher and cooling is less effective.
Innovation Solution
The semiconductor device design features a configuration where the number and surface area of drain contacts are reduced in the central portion, and source contacts are evenly distributed, reducing on-current and heat generation, thereby maintaining a uniform temperature distribution and enhancing heat resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the number of drain contacts is increased to handle higher current density, then current carrying capacity is improved, but heat generation increases and temperature rises causing damage
Solution Approach 1:
The patent applies local quality by creating non-uniform impurity concentration distributions in specific regions. The impurity concentration is made higher in regions adjacent to drain contacts and lower in the central region, optimizing local electrical properties to control current flow and heat generation patterns throughout the semiconductor device
2Productivity
If integration is increased to improve productivity, then output per unit time is improved, but current density increases leading to temperature damage
Solution Approach 1:
The patent changes physical parameters by establishing specific impurity concentration gradients and spatial distributions. By controlling impurity concentrations at different locations and depths, the device achieves optimized electrical characteristics that allow higher integration without excessive temperature rise
Data Source
AI summary
Among multiple drain regions, a contact surface area between second contacts and a drain region most proximal to a central portion of an element region in a second direction is less than a contact surface area between second contacts and a drain region disposed on an outermost side of the element region in the second direction. The multiple drain regions are arranged in the second direction.