MOSFET Driver Circuit With Gate Voltage Control for DC-DC Efficiency
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Solution Overview
Problem
In direct current voltage/direct current voltage converters using a partial high voltage complementary metal-oxide-semiconductor process, the energy conversion efficiency is low due to the large size of the P-type metal-oxide-semiconductor transistor, which requires high current to switch rapidly, and the gate cannot endure high voltage, limiting the efficiency of the converter.
Innovation Solution
A high efficiency driving circuit is designed using multiple P-type and N-type metal-oxide-semiconductor transistors, current sources, and resistors, where the first P-type transistor and first N-type transistor are turned on according to control signals to maintain voltage between specific levels, avoiding gate damage and optimizing current flow for rapid switching and high efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large size P-type metal-oxide-semiconductor transistor is used in a partial high voltage complementary metal-oxide-semiconductor process, then the transistor can handle high voltage at the drain, but the gate cannot endure high voltage and requires very large current to switch rapidly, resulting in low energy conversion efficiency
Solution Approach 1:
The patent segments the voltage handling function by using a first P-type transistor for high voltage switching at the drain while using N-type transistors for low voltage gate control. This segmentation allows each transistor type to operate within its optimal voltage range, with the P-type transistor handling high voltage power switching and N-type transistors managing low voltage control signals, thereby improving energy efficiency while maintaining high voltage capability
Solution Approach 2:
The patent introduces N-type metal-oxide-semiconductor transistors as intermediary control elements between the control signal source and the high voltage P-type transistor. These N-type transistors act as voltage level shifters and current amplifiers, enabling the P-type transistor to be controlled by low voltage signals while still switching high voltage, thus resolving the contradiction between high voltage endurance and energy efficiency
2Power
If a large size P-type metal-oxide-semiconductor transistor is used to handle high voltage, then the transistor can switch high voltage, but very large current is required to switch rapidly, resulting in low energy conversion efficiency
Solution Approach 1:
The patent divides the power switching function between P-type transistors (handling high voltage) and N-type transistors (handling control current). This segmentation allows the high voltage switching to be achieved with minimized control current requirements, as the N-type transistors efficiently couple the control signal to the P-type transistor gate, reducing energy loss while maintaining high voltage switching capability
Solution Approach 2:
The patent changes the voltage and current parameters by using N-type transistors with lower gate threshold voltages to control the P-type transistors. This parameter transformation allows high voltage switching to be achieved with low voltage control signals and minimal control current, thereby improving energy conversion efficiency while maintaining high power capability
Data Source
AI summary
A high efficiency driving circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, a first N-type metal-oxide-semiconductor transistor, a second N-type metal-oxide-semiconductor transistor, a current source, a third N-type metal-oxide-semiconductor transistor, a fourth N-type metal-oxide-semiconductor transistor, a fifth N-type metal-oxide-semiconductor transistor, a first resistor, and a second resistor. The first P-type metal-oxide-semiconductor transistor charges a third terminal of the first P-type metal-oxide-semiconductor transistor according to a first control signal, and the first N-type metal-oxide-semiconductor transistor discharges the third terminal of the first P-type metal-oxide-semiconductor transistor according to a second control signal. A high voltage level of the first control signal is at a first voltage, and a low voltage level of the first control signal is at a third voltage; a high voltage level of the second control signal is at a fourth voltage, and a low voltage level of the second control signal is ground.