MOSFET ESD Protection Circuits with Vertical Meanders
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Solution Overview
Problem
MOSFETs in integrated circuits are sensitive to electrostatic discharge (ESD), leading to potential destruction due to breakdown of thin gate oxides, and existing ESD protection devices reduce MOSFET density and have limitations in discharging high ESD currents.
Innovation Solution
Incorporating source and drain ESD protection circuits with ballasting resistors and terminals that extend parallel to the MOSFET components, allowing for efficient ESD current discharge without reducing MOSFET density, using conductive and resistive elements to form vertical meanders for enhanced protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If known protection devices with discharge terminals are used, then ESD protection is provided, but MOSFET density is reduced due to wide separations required between neighboring MOSFETs
Solution Approach 1:
The ESD protection circuit is merged with the MOSFET structure by integrating discharge terminals that extend from the source and drain regions directly adjacent to the MOSFET channel, eliminating the need for separate lateral discharge terminals and allowing neighboring MOSFETs to be placed closer together while maintaining ESD protection functionality
Solution Approach 2:
The discharge terminals extend vertically from the source and drain regions rather than laterally, utilizing the vertical dimension to provide ESD protection paths that do not occupy lateral space between MOSFETs, thereby maintaining high MOSFET density while providing effective ESD protection
2Reliability
If known protection devices are used, then some ESD protection is provided, but the amount of ESD current that can be successfully discharged is limited
Solution Approach 1:
The ballasting resistors are positioned in series with the discharge terminals and extend vertically, allowing for optimized resistance values that can handle higher ESD currents while maintaining protection functionality, thereby increasing the ESD current discharge capability beyond what is achievable with conventional protection devices
3Productivity
If MOSFETs are placed close together to maximize density, then circuit integration is improved, but ESD protection becomes more difficult to implement
Solution Approach 1:
By extending discharge terminals vertically from source and drain regions rather than laterally, the design provides ESD protection paths that do not interfere with lateral MOSFET placement, enabling high MOSFET density while maintaining effective ESD protection
Solution Approach 2:
The ESD protection is segmented into individual source and drain discharge terminals for each MOSFET, allowing each MOSFET to have its own protection path without requiring lateral spacing, thereby enabling close MOSFET placement while maintaining protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively protects MOSFETs from high ESD currents while maintaining high MOSFET density in integrated circuits, ensuring reliable operation by providing robust ESD protection without the limitations of traditional protection devices.
Implementation Method 1
Incorporating source and drain ESD protection circuits with ballasting resistors and terminals that extend parallel to the MOSFET components, allowing for efficient ESD current discharge
Implementation Method 2
metal-oxide-semiconductor field-effect transistor (MOSFET) with electrostatic discharge (ESD) protection
Data Source
AI summary
Methods, apparatus, and systems relating to a MOSFET with ESD resistance, specifically, to a semiconductor device comprising a field-effect transistor (FET) comprising a gate, a source, and a drain, all extending parallel to each other in a first direction; at least one source electrostatic discharge (ESD) protection circuit; a source terminal disposed above and in electrical contact with the at least one source ESD protection circuit, wherein the source terminal extends in the first direction; at least one drain ESD protection circuit; and a drain terminal disposed above and in electrical contact with the at least one drain ESD protection circuit, wherein the drain terminal extends in the first direction.