MOSFET Gate Control for Battery Reverse Voltage Prevention

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

In battery reverse voltage prevention systems using P-type channel MOSFETs, the opening/closing delay due to resistors and dark current generated by the MOSFETs leads to ineffective instantaneous blocking of reverse voltage, potentially damaging the load.

Innovation Solution

A battery reverse voltage prevention system is implemented by connecting a second P-type channel MOSFET in parallel with the first MOSFET, with the second MOSFET's source terminal connected to the first MOSFET's gate terminal and its drain terminal connected to the ground, reducing the current flowing to a resistor unit and thereby decreasing the opening/closing delay time of the first MOSFET.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a resistor is connected to the gate terminal of the P-type channel MOSFET to limit capacitance and dark current, then the MOSFET can operate stably, but the opening/closing delay time increases and reverse voltage cannot be instantaneously blocked

Engineering Contradiction:

ImproveMOSFET operation stabilityVSAvoidopening/closing delay time

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

The gate terminal control is segmented into two paths: one through the resistor for stable operation and another through the additional P-type channel MOSFET for rapid response. This segmentation allows the system to simultaneously achieve stability and speed by separating the functions of the two paths.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The additional P-type channel MOSFET acts as an intermediary device that provides a low-impedance path for gate charging/discharging current. This intermediary MOSFET bypasses the resistor during switching transitions, enabling fast response while the resistor maintains stability during steady-state operation.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Object-affected harmful factors

If the MOSFET opening/closing delay is reduced for instantaneous reverse voltage blocking, then load protection improves, but the resistor cannot effectively limit capacitance and dark current

Engineering Contradiction:

Improvereverse voltage damage to loadVSAvoidcapacitance and dark current limitation

Core Design Contradiction:

Object-affected harmful factorsVSReliability

Solution Approach 1:

The current limiting function is segmented between the resistor (for steady-state capacitance and dark current limitation) and the additional MOSFET (for transient switching current control). This segmentation allows each component to specialize in its optimal function without compromising the other.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The additional P-type channel MOSFET is activated in advance during the switching transition to prepare a low-impedance path for rapid gate charging/discharging. This preliminary action ensures that when reverse voltage occurs, the MOSFET can immediately block the voltage without delay, while the resistor continues to provide stability.

Inventive Principle:

Principle #10Preliminary action

3Loss of time

If an additional P-type channel MOSFET is connected to the gate terminal, then the opening/closing delay time is reduced, but the device complexity increases

Engineering Contradiction:

Improveopening/closing delay timeVSAvoidMOSFET configuration complexity

Core Design Contradiction:

Loss of timeVSDevice complexity

Solution Approach 1:

The impedance of the gate control path is dynamically changed by activating the additional MOSFET during transitions. This parameter change allows the system to achieve low impedance (fast response) during switching and high impedance (stable operation) during steady-state, resolving the contradiction between speed and complexity.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively reduces the opening/closing delay time of the first MOSFET, ensuring quick blocking of reverse voltage and protecting the load from instantaneous reverse voltage without delaying the MOSFET's operation.

Implementation Method 1

the second MOSFET becomes an on state and current of the battery, which flows to the resistor unit is reduced

Methodology Applied

Scientific EffectElectrical Conduction: Conduction (electrical)

Data Source

PatentUS10992128B2Battery reverse voltage prevention system and method

Publication Date: 2021.04.27 LG ENERGY SOLUTION LTD

AI summary

The present invention relates to a battery reverse voltage prevention system, and more particularly, to a battery reverse voltage prevention system, which prevents current of a battery from flowing to a resistor by connecting an additional P-type channel MOSFET to a P-type channel MOSFET gate terminal in the related art in order to prevent opening/closing of a P-type channel MOSFET from being delayed due to a resistor installed to limit capacitance and dark current generated by the P-type channel MOSFET in a battery reverse voltage prevention system in the related art, which includes the P-type channel MOSFET, thereby reducing an opening/closing delay time of the P-type channel MOSFET in the related art.