MOSFET Gate Driver Recording for Semiconductor Life Prediction

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Solution Overview

Problem

There is a need for semiconductor devices, such as power semiconductor devices, to have a prediction function for their life and degradation as they are used, which existing technologies have not effectively addressed.

Innovation Solution

A semiconductor device configuration that includes a major element with a vertical MOSFET structure and a recording element electrically connected to a gate driver, where the recording element records the number of times the gate voltage is supplied to the major element, allowing for the prediction of the device's life and degradation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a recording element is added to record the number of gate voltage supply times, then the prediction function of device life and degradation is improved, but the device complexity increases

Engineering Contradiction:
Improveprediction function of device life and degradationVSAvoiddevice configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the recording element with the existing gate driver circuit by electrically connecting the recording element to the gate driver. This allows the recording function to be integrated into the existing power semiconductor device structure, adding the prediction capability without requiring a completely separate system.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The recording element acts as an intermediary component that captures the number of gate voltage supply times (switching operations) and stores this data. This intermediary recording function enables life prediction without fundamentally altering the main power switching operation, bridging the gap between operational data and reliability assessment.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If a recording element is added to record the number of gate voltage supply times, then the prediction function of device life and degradation is improved, but the manufacturing cost increases

Engineering Contradiction:
Improveprediction function of device life and degradationVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The gate driver circuit is designed to serve multiple functions: it not only supplies gate voltage to control the power semiconductor device but also counts and records the number of switching operations through the integrated recording element. This multi-functionality reduces the need for separate dedicated recording hardware, potentially lowering manufacturing costs.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250098263A1Semiconductor device
Publication Date: 2025.03.20 KK TOSHIBA
  • US20250098263A1 patent drawing
  • US20250098263A1 patent drawing
  • US20250098263A1 patent drawing

AI summary

A semiconductor device includes a major element including a first semiconductor region, a first electrode, a second electrode, a first gate electrode, and a first insulating member being positioned between the first gate electrode and the first semiconductor region, a gate driver supplying the gate voltage to the first gate electrode, and a recording element electrically connected with the gate driver. The recording element records, as continuously changing analog data, a number of times that the gate voltage is supplied to the first gate electrode while being enough to switch the major element on.