MOSFET Gate Resistor Layout for Lower Chip Temperature Rise
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Solution Overview
Problem
In power modules with transistor chips, embedding a gate resistor to suppress resonance and ensure uniform current flow leads to increased module size and reduced flexibility in chip arrangement, and the resistor's heat generation causes temperature fluctuations and potential destruction of the transistor.
Innovation Solution
A semiconductor device with a MOSFET structure that includes a polycrystalline silicon layer acting as the gate resistor, where the first opening area for connecting the gate electrode pad is larger than the second opening area for connecting the gate wiring layer, facilitating better heat dissipation and reducing temperature rise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gate resistance component is connected outside the transistor chip, then resonance suppression and uniform current flow are achieved, but the power module size increases and arrangement flexibility is reduced
Solution Approach 1:
The gate resistance component is merged with the transistor chip structure by embedding it in the insulating layer on the chip surface. This integration allows the resistance component to be formed using the same semiconductor manufacturing processes as the transistor itself, eliminating the need for separate external components and reducing overall module size while maintaining resonance suppression functionality.
Solution Approach 2:
The gate resistance component is nested within the insulating layer of the transistor chip structure. The resistance layer is positioned between the gate electrode pad and the gate wiring layer, effectively hiding the resistance component within the existing chip architecture rather than adding external components.
2Reliability
If a gate resistance component is connected outside the transistor chip, then resonance suppression and uniform current flow are achieved, but the degree of freedom in arrangement of transistor chips is reduced
Solution Approach 1:
By integrating the gate resistance component directly into the transistor chip structure, the design eliminates external connection requirements, thereby restoring full arrangement flexibility for transistor chips in the power module while maintaining uniform current flow characteristics.
3Area of stationary object
If a gate resistor is embedded in the transistor chip, then module size is reduced and arrangement flexibility is improved, but heat generation causes temperature fluctuations and potential transistor destruction
Solution Approach 1:
The insulating layer is designed with different local properties: regions with larger opening areas beneath the gate electrode pad to enhance heat dissipation, and regions with smaller opening areas in other positions to maintain electrical insulation and resistance functionality. This local differentiation allows heat management without compromising the embedded resistance structure.
Solution Approach 2:
The insulating layer acts as an intermediary structure that serves multiple functions: providing electrical insulation between conductive layers, embedding the gate resistance component, and managing heat dissipation through controlled opening areas that allow thermal pathways while maintaining electrical isolation.
4Area of stationary object
If a gate resistor is embedded in the transistor chip, then module size is reduced and arrangement flexibility is improved, but temperature fluctuations may cause transistor destruction
Solution Approach 1:
The insulating layer is designed with different local properties: regions with larger opening areas beneath the gate electrode pad to enhance heat dissipation, and regions with smaller opening areas in other positions to maintain electrical insulation and resistance functionality. This local differentiation allows heat management without compromising the embedded resistance structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively suppresses temperature rise and maintains transistor characteristics by enhancing heat dissipation through the gate electrode pad, preventing fluctuations and destruction.
Implementation Method 1
the first opening area of the at least one first opening is larger than a second opening area of the at least one second opening, wherein the electrode pad and the first polycrystalline silicon layer are electrically connected via an inside of the at least one first opening, the wiring layer and the first polycrystalline silicon layer are electrically connected via an inside of the at least one second opening
Data Source
AI summary
According to an embodiment, provided is a semiconductor device includes a semiconductor layer; a first electrode; a second electrode; an electrode pad; a wiring layer electrically connected to the gate electrode; a first polycrystalline silicon layer electrically connected to the electrode pad and the wiring layer; and an insulating layer provided between the first polycrystalline silicon layer and the electrode pad and between the first polycrystalline silicon layer and the wiring layer and having a first opening and a second opening. The electrode pad and the first polycrystalline silicon layer are electrically connected via an inside of the first opening. The wiring layer and the first polycrystalline silicon layer are electrically connected via an inside of the second opening, A first opening area of the first opening is larger than a second opening area of the second opening.