Memory cell including programmable resistors with transistor components
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Solution Overview
Problem
Existing memory devices face challenges in achieving high storage density and efficiency, particularly in non-volatile memory devices that require simplified fabrication processes and compact form factors while maintaining data retention without power.
Innovation Solution
The integration of programmable resistors and control transistors, implemented using the same type of components such as MOSFETs, allows for simplified fabrication and compact design, with programmable resistors storing data by adjusting resistance through voltage application and read via current sensing, enabling non-volatile memory cell operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If non-volatile memory devices are used to retain data without power, then data retention capability is improved, but access speed deteriorates
Solution Approach 1:
The memory device is segmented into multiple memory cells, each containing programmable resistors and control transistors. This segmentation allows parallel access to multiple storage units, improving overall access speed while maintaining non-volatile data retention capabilities of individual cells
Solution Approach 2:
The memory device incorporates dynamic control mechanisms where control transistors can rapidly switch between states to enable fast data access. The programmable resistors can be dynamically reconfigured through voltage application, allowing the system to optimize between retention mode and access mode operations
2Adaptability or versatility
If different types of components are used for programmable resistors and control transistors, then functional flexibility is improved, but fabrication complexity worsens
Solution Approach 1:
The control transistor is designed to serve multiple functions: it acts as a switch for data access, a selector for reading specific memory cells, and a control element for programming the resistive memory element. This multi-functionality reduces the need for separate dedicated components, simplifying fabrication while maintaining functional flexibility
Solution Approach 2:
The invention merges the control transistor and programmable resistor into an integrated memory cell structure where they share common electrical connections and physical space. This combination reduces the total number of discrete components and interconnections, thereby simplifying the fabrication process while preserving the necessary functional flexibility for memory operations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances storage density and facilitates a compact form factor with efficient data retention, leveraging symmetrical resistor configurations and shared components to simplify the fabrication process.
Implementation Method 1
A resistance of the programmable resistor may be set by applying a voltage to the gate structure
Implementation Method 2
Data stored by the programmable resistor can be read by sensing current through the programmable resistor
Data Source
AI summary
Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set by applying a voltage to the gate structure, while the control transistor is enabled. Data stored by the programmable resistor can be read by sensing current through the programmable resistor, while the control transistor is disabled. In one aspect, the one or more programmable resistors and the control transistor are implemented by same type of components, allowing the memory cell to be formed in a compact manner through a simplified the fabrication process.