Power MOSFET Model Parameter Extraction Using Datasheet Data
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Solution Overview
Problem
Engineers face challenges in accurately parameterizing generic MOSFET models due to the need for material- and structure-related data, which is often unavailable, making it difficult and costly to simulate the behavior of specific off-the-shelf power MOSFETs using computer-aided design.
Innovation Solution
A method and system for determining parameters of a power MOSFET model using only datasheet data, independent of semiconductor material or manufacturing technology, by fitting static and dynamic parameters through computer simulations to match the device's steady-state and transient-response characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If generic MOSFET models are used for simulation, then simulation capability is provided, but accuracy is insufficient due to lack of material- and structure-related data
Solution Approach 1:
The patent extracts only the essential parameters needed for accurate simulation from the device datasheet, separating these from the unavailable material- and structure-related data. This allows achieving accurate simulation results without requiring the full set of complex parameters that would normally be needed.
Solution Approach 2:
The patent creates a simplified copy of the MOSFET model that replicates the essential electrical characteristics using only datasheet parameters. This copied model captures the necessary behavior for simulation purposes without needing the complete physical description of the device.
2Measurement precision
If material- and structure-related data are obtained for accurate parameterization, then simulation accuracy improves, but cost and complexity increase
Solution Approach 1:
The patent enables the model parameterization process to be self-sufficient by using only publicly available datasheet information. The methodology extracts all necessary parameters directly from the device datasheet without requiring access to proprietary manufacturing data, internal structure information, or material specifications that would otherwise be needed.
Solution Approach 2:
The patent creates a universal parameter extraction methodology that works across different MOSFET devices and manufacturers using only datasheet data. This universal approach eliminates the need for device-specific proprietary information, making the process broadly applicable without increasing complexity or cost.
3Reliability
If comprehensive device data is collected for precise simulation, then simulation fidelity improves, but time and resources required increase
Solution Approach 1:
The patent segments the parameter extraction process into distinct steps that systematically process different sections of the datasheet. This segmentation allows for efficient organization and extraction of parameters without requiring manual analysis of the entire datasheet, reducing the time and effort needed while maintaining comprehensive parameter coverage.
Data Source
AI summary
Systems and methods are provided for determining parameters of a power MOSFET model. First data related to characteristics of a semiconductor device in a steady-state operation and second data related to transient-response characteristics of the device are received. Variables of one or more functions are fit to the first data to determine static parameters of a power MOSFET model. A computer simulation is executed to determine transient-response characteristics of the model as configured with a current set of dynamic parameters, where the simulation generates a set of values indicative of the model's transient-response characteristics. An error value indicating a difference between the set of values and the second data is determined. Based on a determination that the error value is greater than the threshold, values of the current set of dynamic parameters are adjusted based on the error value and results of computer simulations.