MOSFET Power Amplifier Cell With Built-In 50Ω Impedance Matching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
RF power amplifiers used in low-power applications face challenges in managing power consumption and performance due to the need for impedance matching circuits, which require high voltage sources and consume additional power, and occupy valuable space on integrated circuits.
Innovation Solution
A novel RF power amplifier design that eliminates the need for impedance matching circuits by using a nanoscale power cell with inductors coupled to the source and gate of a MOSFET, achieving 50Ω input and output impedances without external matching circuits, allowing for efficient power transfer and reduced supply voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If impedance matching circuits are used in RF power amplifiers, then impedance matching is achieved, but power consumption increases and circuit complexity increases
Solution Approach 1:
The patent extracts and eliminates the separate impedance matching circuits from the RF power amplifier system. By designing the power cell itself to provide inherent 50Ω input and output impedances through proper transistor sizing and inductor coupling, the need for external matching circuits is removed, thereby reducing power consumption while maintaining impedance matching.
Solution Approach 2:
The patent merges the impedance matching function into the power cell itself. The power transistors and coupled inductors are designed to simultaneously provide power amplification and 50Ω impedance matching at both input and output, combining multiple functions into a single integrated cell that reduces overall system complexity and power consumption.
2Reliability
If impedance matching circuits are used in RF power amplifiers, then impedance matching is achieved, but device area increases
Solution Approach 1:
The patent removes the separate impedance matching circuits that would occupy additional area on the integrated circuit. By making the power cell itself impedance-matched through proper design of the transistor dimensions and inductor coupling, valuable IC real estate is freed up for other functions.
Solution Approach 2:
The impedance matching function is merged into the power cell structure. The same transistors and inductors that provide power amplification also provide 50Ω impedance matching, eliminating the need for separate matching circuit components and reducing the overall device area.
3Power
If high voltage sources are used in RF power amplifiers, then power output is increased, but power consumption increases
Solution Approach 1:
The patent changes the operating parameters of the power transistors by optimizing the width-to-length ratios of the input and output transistors. This allows the transistors to operate at lower voltages while still achieving the desired power output through improved transconductance and current drive capability, thereby reducing power consumption.
Solution Approach 2:
The coupled inductors are designed with specific inductance values and coupling coefficients that enable efficient power transfer at lower voltage levels. By optimizing the inductor parameters, the system achieves high power output without requiring high voltage sources, thus reducing overall power consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables maximum power transfer with reduced static power consumption and supply voltage, while maintaining desired impedance matching, thus improving efficiency and performance in low-power applications.
Implementation Method 1
a first inductor coupled to a gate of the power transistor; a second inductor coupled to a source of the power transistor, wherein the first inductor and the second inductor each includes a first conductive coil and a second conductive coil, respectively, having first and second inductance values, respectively
Data Source
AI summary
A power amplifier (PA) cell is coupled to an input signal source, and includes a transistor coupled to the load; a first inductor coupled to a gate of the transistor; and a second inductor coupled to a source of the transistor, wherein the first inductor and the second inductor each includes a first conductive coil and a second conductive coil, respectively, having first and second inductance values, respectively, such that the PA cell includes a terminal between the gate of the transistor and the input signal source, and the terminal is impedance matched with the input signal source.


