Integrated MOSFET Power Module for Linear Switching and Sensing
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Solution Overview
Problem
Power module switches require efficient operation modes, including linear and high-current non-linear modes, while also needing sensing capabilities, but existing MOSFET configurations often compromise on safety, efficiency, and diagnostic coverage due to limited pin count and complex pin configurations.
Innovation Solution
A power module circuit package incorporating three MOSFETs - a LIN-FET for linear operation, an ON-FET for high-current non-linear operation, and a sensing transistor, all encapsulated in a semiconductor molding compound with a common drain and shared source nodes, and separate gate control signals to manage different operational modes and sensing functions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple MOSFETs are used to provide both linear and high-current non-linear operation modes, then operational versatility is improved, but device complexity increases
Solution Approach 1:
The patent combines multiple MOSFETs (LIN-FET for linear operation, ON-FET for high-current non-linear operation, and sensing transistor) into a single integrated power module package with shared source and drain nodes. This merging approach provides both linear and non-linear operation modes within one device, eliminating the need for separate transistors and reducing overall system complexity while maintaining operational versatility.
Solution Approach 2:
The power module package is designed with universal functionality to handle multiple operation modes through a single integrated structure. The shared source and drain nodes allow the same physical package to support both linear mode (via LIN-FET) and high-current non-linear mode (via ON-FET), as well as sensing operations, making the device adaptable to various operational requirements without needing separate dedicated components.
2Measurement precision
If separate sensing transistor is added for diagnostic capabilities, then measurement precision is improved, but pin count increases
Solution Approach 1:
The sensing transistor is integrated within the same power module package as the LIN-FET and ON-FET, sharing common source and drain nodes. This integration allows the sensing function to be added without requiring separate external components or additional pins beyond what is already needed for the power switching functions, thereby maintaining pin efficiency while enabling precise diagnostic capabilities.
3Productivity
If LIN-FET and ON-FET are both included in the same package, then operational efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The LIN-FET, ON-FET, and sensing transistor are manufactured as an integrated circuit within a single power module package rather than as separate discrete components. This monolithic integration simplifies the manufacturing process by eliminating the need for separate assembly steps, wiring, and alignment that would be required if these transistors were packaged separately and then mounted together, thereby improving ease of manufacture while maintaining the operational efficiency benefits of having both transistor types available.
Data Source
AI summary
A power module package may comprise a first metal oxide semiconductor field effect transistor (MOSFET), wherein the first MOSFET is configured to operate in a linear mode of operation when the first MOSFET is ON; a second MOSFET, wherein the second MOSFET is configured to operate in a non-linear mode of operation when the second MOSFET is ON, and wherein the first MOSFET and the second MOSFET are arranged in parallel; and a third MOSFET, wherein the third MOSFET is arranged to perform one or more sensing operations. The first MOSFET, the second MOSFET, and the third MOSFET may be arranged within a molding compound of the power module package.