MOSFET Array Temperature Sensor Using SiC Doped Well
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Solution Overview
Problem
Conventional temperature sensors integrated with MOSFET arrays suffer from low sensitivity and are unusable in certain switching states, with process and integration limitations.
Innovation Solution
An integrated temperature sensor is provided, featuring a resistor with a doped well region and circuitry to measure its resistance, allowing for temperature calculation. The resistance of the doped well region can be adjusted by applying a voltage to a control gate, enhancing sensitivity and reducing dependence on the ON/OFF state of the FET array.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional integrated temperature sensors are used with MOSFET arrays, then temperature monitoring is achieved, but sensitivity is low and usability is limited in certain switching states
Solution Approach 1:
The patent applies parameter changes by utilizing the voltage-dependent resistance characteristic of the doped well region. By changing the voltage parameter applied to the control gate, the resistance of the doped well region is modified, which directly improves the temperature sensing sensitivity and enables reliable operation across different MOSFET switching states. This parameter change transforms the sensor from a passive structure into an actively controllable temperature probe.
2Reliability
If integrated temperature sensors are added to MOSFET arrays, then temperature monitoring capability is provided, but process and integration complexity increases
Solution Approach 1:
The patent merges the temperature sensing function with the existing MOSFET array structure by utilizing the doped well region that is already part of the transistor fabrication process. The control gate of the temperature sensor is integrated into the same fabrication sequence as the MOSFET gates, eliminating the need for separate sensor fabrication steps. This merging approach provides temperature monitoring capability while minimizing additional process and integration complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables effective monitoring of MOSFET temperatures, improving sensitivity and usability across various switching states, while reducing process and integration complexities.
Implementation Method 1
circuitry for measuring a resistance of the doped well region and calculating a temperature associated with the transistor array based on the measured resistance
Implementation Method 2
The resistance of the doped well region may be adjusted by applying a selected voltage to a control gate formed over the doped well region
Data Source
AI summary
A temperature sensor integrated in a transistor array, e.g., metal-oxide-semiconductor field-effect transistor (MOSFET) array, is provided. The integrated temperature sensor may include a doped well region formed in a substrate (e.g., SiC substrate), a resistor gate formed over the doped well region, first and second sensor terminals conductively coupled to the doped well region on opposite sides of the resistor gate. The integrated temperature sensor includes a gate driver to apply a voltage to the resistor gate that affects a resistance of the doped well region below the resistor gate, and temperature analysis circuitry to determine a resistance of a conductive path passing through the doped well region, and determine a temperature associated with the transistor array.