MOSFET Voltage Comparison Circuit Without Resistor Overhead
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Solution Overview
Problem
Existing semiconductor devices face challenges in comparing voltages efficiently without increasing chip size or power consumption, often requiring additional elements like resistors that can lead to increased size and temperature-dependent current consumption.
Innovation Solution
A semiconductor device configuration using P-channel and N-channel MOSFET switch elements, current mirror circuits, and diodes to compare voltages without the need for additional resistors, thereby suppressing gate-source voltage increases and reducing power consumption while maintaining efficient current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional resistors are used to compare voltages, then voltage comparison function is achieved, but chip size increases
Solution Approach 1:
The patent extracts and eliminates the resistor element from the voltage comparison circuit, replacing it with a configuration that uses only switch elements and current sources. This removal of the resistor directly addresses the chip size increase problem while maintaining the voltage comparison functionality through alternative circuit topology.
Solution Approach 2:
The patent merges the voltage comparison function with the existing switch element structure by configuring the gates of the switch elements to receive the voltages to be compared. This integration eliminates the need for separate resistor-based comparison circuits, thereby reducing chip size while achieving the same functional outcome.
2Reliability
If additional resistors are used to compare voltages, then voltage comparison function is achieved, but power consumption increases
Solution Approach 1:
By extracting the resistor from the circuit configuration, the patent eliminates the continuous power consumption associated with resistor-based voltage division and comparison. The remaining circuit uses switch elements that consume power only during switching operations, significantly reducing overall power consumption while maintaining voltage comparison capability.
Solution Approach 2:
The patent employs switch elements that operate in a periodic or controlled switching manner rather than continuous operation. The switch elements are activated only when voltage comparison is needed, converting continuous power consumption into periodic action, thereby reducing average power consumption while maintaining the voltage comparison function.
3Reliability
If gate-source voltage increases are suppressed, then switch element protection is achieved, but voltage comparison range is limited
Solution Approach 1:
The patent applies local quality by configuring each switch element's gate-source voltage independently through dedicated current sources. This allows precise control of the voltage differential across each switch, protecting them from excessive voltage stress while maintaining the ability to compare a wide range of input voltages through proper biasing and current control.
Solution Approach 2:
The patent utilizes parameter changes by adjusting the current source values and switch element characteristics to optimize the voltage comparison range. By changing the operating parameters of the switch elements and current sources, the circuit can accommodate different voltage ranges while keeping gate-source voltage within safe limits, thus maintaining both protection and adaptability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively compares voltages while minimizing chip size and power consumption, preventing switch element destruction and reducing temperature-dependent current consumption, thus offering a compact and efficient design.
Implementation Method 1
a first switch element (Q1) including a source to which a first voltage (V1) is applied, and a drain and a gate electrically coupled to a first node (N3), a second switch element (Q2) including a source to which a second voltage (V2) is applied, and a drain and a gate electrically coupled to the first node (N3)
Implementation Method 2
the drain and the gate of the first switch element (Q1) are electrically coupled to a first diode (D1), an anode of which is coupled to the drain and the gate of the first switch element (Q1), and a cathode of which is coupled to the first node (N3)
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first switch element including a first end to which a first voltage is applied, and a second end and a gate electrically coupled to a first node, a second switch element including a first end to which a second voltage is applied, and a second end and a gate electrically coupled to the first node, a third switch element including a first end to which the second voltage is applied, a second end electrically coupled to a second node, and a gate coupled to the first node, a fourth switch element including a gate coupled to the second node, and a first terminal electrically coupled to a first end of the fourth switch element and outputting a signal based on a voltage of the second node.