MOSFET Random Telegraph Noise Native Device for True Random Number Generation
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Solution Overview
Problem
Existing random number generators lack direct control over entropy sources and require large, complex systems due to small noise generators, leading to increased area and cost.
Innovation Solution
The development of a device with artificial traps engineered using methods like STM, quantum dots, or nanocrystalline deposition, allowing for controlled tuning of tunneling time and statistical characteristics of random numbers through a MOS-type structure with an oxide layer containing artificial trapping layers, enabling a smaller noise source and reduced circuit size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional noise sources (thermal noise, RTN) are used in random number generators, then random numbers can be generated, but the system requires large and complicated circuits including amplifiers, filters, and comparators, increasing area and cost
Solution Approach 1:
The patent extracts and amplifies only the necessary noise signal directly from the entropy source (RTN or thermal noise) within a simplified circuit architecture. By using a current mirror configuration, the circuit extracts the noise signal and replicates it, eliminating the need for complex amplifiers, filters, and comparators while maintaining random number generation capability
Solution Approach 2:
The entropy source itself (transistor with RTN or thermal noise) serves dual purposes: it generates the random signal and provides sufficient signal strength directly without requiring external amplification circuits. The circuit leverages the inherent noise characteristics of the transistor to drive the output directly, making the system self-sufficient
2Reliability
If conventional noise sources are used, then random numbers can be generated, but a relatively large system is required, increasing area and cost
Solution Approach 1:
The patent merges multiple functions into a single compact circuit block. The current mirror structure combines signal extraction, amplification, and output driving in one integrated configuration, significantly reducing the circuit area compared to conventional separate amplifier, filter, and comparator stages
Solution Approach 2:
The patent extracts and utilizes the full strength of the noise signal directly from the entropy source without requiring additional buffering or conditioning circuits. By taking out only the essential noise component and using it directly, the circuit area is minimized while maintaining generation capability
3Reliability
If conventional noise sources are used, then random numbers can be generated, but there is no direct control in the entropy source
Solution Approach 1:
The patent introduces dynamic control over the entropy source by allowing adjustment of the transistor bias conditions and operating point. This enables real-time control of the noise characteristics and random number generation rate, making the system adaptable to different applications and requirements
Solution Approach 2:
The patent enables control by changing key parameters of the entropy source transistor, such as bias voltage, current, and operating region. By adjusting these parameters, the noise characteristics and output statistics can be directly controlled, providing versatility without requiring complex external control circuits
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient generation of random numbers with direct control over statistical characteristics, reducing circuit area and cost by utilizing a larger noise source and voltage-tuned tunneling time, enhancing data delivery and circuit integration.
Implementation Method 1
Random telegraph noise native device for true random number generator and noise injection
Implementation Method 2
carrier traps are designed to occupy a predetermined distance from conduction and valance bands of material of the artificial trapping layer
Implementation Method 3
voltage is used to tune the tunneling time of trapping/detrapping
Data Source
AI summary
A method (and system) for generating random numbers includes setting a drain voltage Vd on an MOSFET device to maximize a transconductance of the MOSFET device and setting a gate voltage Vg of the MOSFET device to tune as desired a random number statistical distribution of an output of the MOSFET device. The MOSFET device includes a gate structure with an oxide layer including at least one artificial trapping layer in which carrier traps are designed to occupy a predetermined distance from conduction and valance bands of material of the artificial trapping layer.