Molybdenum Titanium Sputtering Target Phase Control
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Solution Overview
Problem
The production of large molybdenum-titanium sputtering targets with minimal β(Ti, Mo) alloy phase formation is challenging due to physical limitations in powder packing density and size, requiring innovative methods for bonding smaller segments while maintaining desired electrical properties and film uniformity.
Innovation Solution
A method involving blending molybdenum and titanium powders, consolidating, encapsulating, and compacting them under heat and pressure to form large target plates with edge-to-edge bonding, ensuring temperatures below the monotectoid temperature to prevent β(Ti, Mo) phase formation, and using high-purity powders with specific particle sizes to achieve targets with either zero or single β(Mo, Ti) phase.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional rolling methods are used to produce molybdenum-titanium sputtering targets, then the production process is simple, but the desired film uniformity and minimal particle generation cannot be achieved
Solution Approach 1:
The invention changes the manufacturing parameters by using hot isostatic pressing (HIP) instead of conventional rolling, controlling temperature (900-1100°C), pressure (15-30 tons), and time (4-8 hours) to achieve desired density and phase composition while minimizing β(Ti, Mo) phase formation
Solution Approach 2:
The invention uses composite powder mixtures of molybdenum and titanium with specific atomic ratios (40-60 at% Mo, 40-60 at% Ti) to control phase formation during HIP processing, achieving single-phase or minimal two-phase structures that provide superior film uniformity
2Manufacturing precision
If hot isostatic pressing is used to produce large sputtering targets, then film uniformity and particle generation are improved, but the target size is limited by equipment constraints
Solution Approach 1:
The invention divides the large target into multiple smaller segments or plates that can be individually processed in the HIP equipment, then bonds these segments together to form the final large-area target, overcoming equipment size limitations while maintaining processing quality
Solution Approach 2:
The invention combines multiple HIP-processed segments through bonding operations to create large-area targets, merging the advantages of controlled small-scale processing with the requirements for large production area
3Area of stationary object
If multiple segments are bonded together to form large targets, then the required target area is achieved, but β(Ti, Mo) alloy phase formation increases
Solution Approach 1:
The invention performs preliminary HIP processing on individual segments before bonding, establishing the desired phase composition and microstructure in each segment separately, which prevents excessive β(Ti, Mo) phase formation during subsequent bonding operations
Solution Approach 2:
The invention applies different processing conditions to different regions or segments, optimizing the local phase composition in each segment to minimize overall β(Ti, Mo) phase content while achieving the required large target area
4Stability of the object's composition
If powder mixing is used to create homogeneous blends, then composition uniformity is improved, but particle size distribution control becomes more difficult
Solution Approach 1:
The invention changes the powder characteristics by controlling particle size ranges (0.5-5 μm for Mo, 0.5-5 μm for Ti) and using specific mixing techniques to achieve homogeneous composition while maintaining controlled particle size distribution for optimal HIP densification
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of large area sputtering targets with densities above 90% theoretical density, minimizing β(Ti, Mo) alloy phase presence, and achieving uniform film deposition with improved adhesion and electrical properties, suitable for applications in semiconductor and flat panel display manufacturing.
Implementation Method 1
compacting while heating the encapsulated powder to produce a first MoTi target plate
Implementation Method 2
bonding the first target plate to a second MoTi target plate along an edge of the first and second plates
Implementation Method 3
The magnetron sputtering apparatus induces plasma ions of a gas to bombard a target, causing surface atoms of the target material to be ejected and deposited as a film or layer on the surface, of a substrate
Data Source
AI summary
Molybdenum titanium sputter targets are provided. In one aspect, the targets are substantially free of the β(Ti, Mo) alloy phase. In another aspect, the targets are substantially comprised of single phase β(Ti, Mo) alloy. In both aspects, particulate emission during sputtering is reduced. Methods of preparing the targets, methods of bonding targets together to produce large area sputter targets, and films produced by the targets, are also provided.