MOTT Insulator Phase Transition for Charge Dissipation
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Solution Overview
Problem
Compound semiconductor devices are prone to breakage and deterioration when exposed to high-energy particles due to the formation of electron-hole pairs, which create conduction paths and increase hole concentration, leading to potential and hole current fluctuations, and existing solutions like SiN capacitors fail to dissipate charges effectively.
Innovation Solution
Incorporating a strongly correlated electron system material between the gate and source electrodes, which undergoes a phase transition from insulator to conductor, allowing electron-hole pairs to flow to ground and reducing device damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a SiN capacitor is connected between gate electrode and source electrode to improve high frequency characteristics, then high frequency characteristics are improved, but charges generated by electron-hole pairs cannot be removed and device reliability deteriorates
Solution Approach 1:
A novel charge removal structure is introduced as an intermediary component between the gate electrode and source electrode. This structure includes a first electrode connected to the gate electrode, a second electrode connected to the source electrode, and a charge removal layer formed between these electrodes, which provides a dedicated pathway for removing charges without interfering with the capacitor's high frequency function
Solution Approach 2:
The charge removal function is segmented from the capacitor structure by creating separate first and second electrodes with a dedicated charge removal layer between them, allowing independent optimization of both high frequency characteristics and charge removal capability
2Quantity of substance
If high energy particles are incident upon the device, then electron-hole pairs are generated increasing hole concentration and potential, but conduction paths form causing device breakage
Solution Approach 1:
The harmful electron-hole pairs generated by high energy particle incidence are converted into a beneficial effect by providing a controlled conduction path through the charge removal structure. This structure allows the excess charges to be safely removed to ground potential, transforming the harmful charge accumulation into a controlled charge removal mechanism that protects the device
Solution Approach 2:
The charge removal structure acts as an intermediary pathway between the AlGaN channel layer where electron-hole pairs are generated and the ground, providing a safe route for charge dissipation that prevents the formation of damaging conduction paths through the passivation film
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound semiconductor device becomes more resilient to severe environments by effectively dissipating electron-hole pair-generated charges, reducing damage from high-energy particles and maintaining operational integrity.
Implementation Method 1
the strongly correlated electron system material connected to the gate electrode senses potential fluctuation in the device, and conducts phase transition from an insulator to a conductor in a short time
Implementation Method 2
The electron-hole pairs generated in the device pass through the strongly correlated electron system material which has been changed to a conductive material, and flow to the ground
Data Source
AI summary
A semiconductor layer (2,3) is provided on a substrate (1). A gate electrode (4), a source electrode (5) and a drain electrode (6) are provided on the semiconductor layer (3). A strongly correlated electron system material (12) is connected between the gate electrode (4) and the source electrode (5).