Movable Gas Distribution Conduit for Uniform Thin Film Deposition
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Solution Overview
Problem
Current processing apparatus and methods fail to yield films with suitable material quality, such as low defect density, composition control, high purity, morphology, in-wafer uniformity, and run-to-run reproducibility for advanced materials like III-V materials in CMOS devices.
Innovation Solution
An apparatus and method for delivering process gases to a substrate using a gas distribution conduit movable within a process chamber, coupled with a heating system and exhaust manifold, to uniformly deposit advanced compound thin films by optimizing gas distribution and temperature control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional processing apparatus and methods are used, then device fabrication can proceed, but film material quality is insufficient (high defect density, poor composition control, low purity, bad morphology, poor in-wafer uniformity, and poor run-to-run reproducibility)
Solution Approach 1:
The gas distribution conduit is made movable relative to the substrate support through an actuator mechanism, allowing dynamic adjustment of gas delivery positions. This enables optimized gas distribution patterns across different regions of the substrate during deposition, improving film uniformity and material quality while reducing defects
Solution Approach 2:
The movable gas distribution conduit enables different regions of the substrate to receive process gases from optimally positioned conduits. By locally adjusting gas delivery positions and flow rates, the system achieves superior composition control and purity in different areas of the film, addressing the uniformity issues in conventional fixed systems
2Manufacturing precision
If conventional fixed gas distribution is used, then apparatus structure is simple, but in-wafer uniformity and composition control are poor
Solution Approach 1:
The system employs a movable gas distribution conduit coupled to an actuator that can reposition the conduit relative to the substrate support. This dynamic capability allows the same physical conduit to serve multiple positions, achieving superior in-wafer uniformity without requiring multiple fixed conduits, thus balancing performance with moderate complexity increase
Solution Approach 2:
The single movable gas distribution conduit performs multiple functions by being repositioned to different locations over the substrate. Instead of requiring separate fixed conduits for each zone, one conduit can service multiple regions sequentially or simultaneously, reducing the number of components while improving uniformity
3Manufacturing precision
If advanced materials like III-V materials are processed, then energy efficiency and speed improve, but current processing methods fail to achieve suitable material quality
Solution Approach 1:
The system enables precise control of deposition parameters including gas flow rates, conduit positions, and heating temperatures. By dynamically adjusting these parameters during the deposition process, the system achieves the high material quality required for advanced materials like III-V compounds, making complex material processing more controllable and reproducible
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables uniform and controlled deposition of materials like III-V, SiGe, SiC, and GeSn with improved material quality, addressing the limitations of existing technologies in achieving low defect density and composition control.
Implementation Method 1
a heating system to provide heat energy to a substrate when disposed on the substrate support
Implementation Method 2
a gas distribution conduit disposed in a processing volume of a process chamber above a substrate to distribute a process gas to a processing surface of the substrate
Implementation Method 3
an actuator coupled to the gas distribution conduit to move the gas distribution conduit with respect to the substrate support
Implementation Method 4
an exhaust manifold disposed to a second side of the substrate support opposite the gas inlet port to exhaust the process gases from the process chamber
Implementation Method 5
uniformly deposit advanced compound thin films
Data Source
AI summary
Methods and apparatus for delivering process gases to a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a gas distribution conduit disposed in a processing volume of a process chamber above a substrate support to distribute a process gas to a processing surface of the substrate when disposed on the substrate support; and an actuator coupled to the gas distribution conduit to move the gas distribution conduit with respect to the substrate support. In some embodiments, a method of processing a substrate may include introducing a process gas to a process chamber through a gas distribution conduit disposed above a substrate having a processing surface; and moving the gas distribution conduit within the process chamber and with respect to the substrate to distribute the process gas across the processing surface of the substrate.