Movable Grid Ion Beam Source for Precise Energy Control
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Solution Overview
Problem
Existing ion beam sources lack the ability to effectively control the energy of the ion beam, which is crucial for precise substrate processing in semiconductor fabrication.
Innovation Solution
The ion beam source incorporates a plasma chamber, a plasma generator, and a system of grids with a grid driver that allows for the relative movement of the grids, enabling control over the energy of the ion beam by adjusting the overlap area between grid penetration holes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple stacked grids are used to extract ions from plasma, then the ion beam can be generated, but the energy of the ion beam cannot be effectively controlled
Solution Approach 1:
The patent applies the dynamics principle by making the first grid movable relative to the second grid through a grid driver mechanism. This allows the overlap area between grid penetration holes to be dynamically adjusted, thereby controlling the ion beam energy. The movable grid configuration enables real-time modification of the ion extraction characteristics without changing the overall grid structure or adding complex control systems.
2Manufacturing precision
If the overlap area between grid penetration holes is adjusted to control ion beam energy, then energy control is achieved, but the device structure becomes more complex
Solution Approach 1:
The patent applies segmentation by dividing the grid system into separate movable and stationary grid components. The first grid is segmented from the second grid, allowing independent movement of the first grid while the second grid remains fixed. This segmentation enables precise control of the overlap area between penetration holes through the grid driver, achieving accurate ion beam energy control with a relatively simple mechanical structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for precise control of the ion beam energy and direction, enhancing the versatility and accuracy of substrate processing for various semiconductor processes.
Implementation Method 1
a plasma generator configured to generate plasma in the plasma generating space
Implementation Method 2
The ion beam is generated by extracting ions passing through holes formed in each of the grids
Implementation Method 3
a first grid driver connected to the first grid, wherein the first grid driver is configured to move the first grid relative to the second grid
Data Source
AI summary
An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid.