Movable Heat Source for Wafer Thermal Processing
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Solution Overview
Problem
The increasing complexity of processing semiconductor devices with decreased feature sizes in integrated circuits poses challenges in achieving precise thermal processing, as existing methods struggle to efficiently control temperature uniformity and processing speed.
Innovation Solution
An apparatus and method utilizing a combination of heat sources and movable devices within a process chamber, where the position and orientation of heat sources are adjustable to control thermal flux and temperature distribution on a wafer, allowing for precise thermal processing through translational and rotational motions, and the use of a spherical joint for adjustable radiation distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If more aggressive design rules are implemented to increase IC device density, then the density of IC devices increases, but the complexity of processing semiconductor devices with decreased feature sizes increases
Solution Approach 1:
The heating system is divided into multiple independent heat sources arranged in arrays, allowing individual control of each heat source. This segmentation enables precise local temperature control across different regions of the wafer, addressing the increased processing complexity while supporting higher device density
Solution Approach 2:
The heat sources are made movable along the wafer surface, transitioning from static to dynamic positioning. This allows the system to adapt heat distribution in real-time, controlling temperature uniformity and processing speed despite the increased complexity of processing smaller feature sizes
2Manufacturing precision
If the position and orientation of heat sources are made adjustable to control thermal flux, then temperature uniformity control improves, but device complexity increases
Solution Approach 1:
Heat sources are equipped with movable components that allow dynamic adjustment of position and orientation. This enables real-time optimization of thermal flux distribution across the wafer surface, achieving precise temperature uniformity control while the modular design keeps the added complexity manageable
Solution Approach 2:
The system allows independent adjustment of multiple parameters for each heat source including position, orientation, and intensity. By changing these parameters dynamically, the system achieves precise control over temperature uniformity and processing speed without requiring complete system redesign
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control over temperature uniformity and processing speed, enhancing the efficiency of thermal processes such as annealing and epitaxy by adjusting the distance and orientation of heat sources relative to the wafer, thereby improving the quality and density of semiconductor devices.
Implementation Method 1
a heat source in the process chamber and configured to apply thermal energy to the wafer
Data Source
AI summary
A method includes delivering a wafer into a process chamber, applying a thermal energy to the wafer by a heat source, and moving the heat source substantially along a longitudinal direction of the heat source with respect to the wafer. An apparatus that performs the method is also disclosed.