Movable Oxidation Head for Integrated Metal Deposition
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Solution Overview
Problem
Current deposition methods for metal oxide layers, such as MgO, in electronic devices like semiconductor devices are time-consuming and require multiple processing steps, including sputtering and oxidation, which can lead to contamination and inefficiencies.
Innovation Solution
A deposition device and method that integrates metal deposition and oxidation within a single processing container, using a head to inject oxidizing gas and control the oxidation process, with optional heating mechanisms to facilitate faster oxidation and prevent contamination, allowing for the formation of high-quality metal oxide layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate processing devices are used for metal deposition and oxidation, then each process can be performed with optimized conditions, but the total processing time increases and contamination risk increases
Solution Approach 1:
The patent combines the metal deposition and oxidation processes into a single processing chamber. The chamber can accommodate both a sputtering target for metal deposition and an oxidation head for oxidation, allowing both processes to be performed sequentially without transferring the substrate between chambers, thereby reducing total processing time while maintaining process quality
Solution Approach 2:
The processing chamber is designed to perform multiple functions: it can conduct both sputtering deposition and thermal oxidation. The chamber includes a sputtering target, gas supply systems for both sputtering and oxidation, and a substrate holder that can be positioned for either process, making the system universal and eliminating the need for separate dedicated chambers
2Reliability
If separate processing devices are used for metal deposition and oxidation, then each process can be performed with optimized conditions, but the number of processing steps increases
Solution Approach 1:
The patent merges the deposition and oxidation processes into a single integrated system. The processing chamber contains both the sputtering target and oxidation head, and the substrate is processed sequentially through both steps without removal, reducing the number of processing steps from multiple separate operations to a single continuous process
3Reliability
If separate processing devices are used for metal deposition and oxidation, then contamination between processes is reduced, but transfer time and contamination risk during transfer increase
Solution Approach 1:
The patent combines both processes in one chamber to eliminate substrate transfer between chambers, thereby eliminating the contamination risk associated with transfer. The chamber is equipped with separate gas supply systems and process control mechanisms that prevent cross-contamination between sputtering and oxidation processes
4Reliability
If a head is provided inside the space between target and substrate, then oxidation can be performed, but the head interferes with metal deposition
Solution Approach 1:
The oxidation head is designed to be movable rather than fixed. It can be positioned in the first region during oxidation processes and repositioned to the second region during sputtering deposition, allowing the system to adapt its configuration based on the active process and eliminating interference with metal deposition
Solution Approach 2:
The processing space is divided into distinct regions: a first region where the oxidation head operates during oxidation, and a second region where sputtering occurs. The head can be selectively positioned in different regions depending on the process being performed, allowing both oxidation capability and deposition quality to be maintained
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the time required to form metal oxide layers by integrating deposition and oxidation processes, improving efficiency and quality while minimizing contamination and enhancing vacuum conditions within the processing container.
Implementation Method 1
the power supply generates power for causing positive ions in the gas supplied from the first gas supply part to collide against the metal target
Implementation Method 2
the metal deposited on the target object can be oxidized
Data Source
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AI summary
A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region. ABSTRACT AS PUBLISHED This deposition device is provided with a treatment container. A mounting platform is arranged in the treatment container, and a metal target is provided above the mounting platform. Further, a head is configured to jet an oxidizing gas towards the mounting platform. This head can move between a first region, which is between the metal target and the mounting region where workpieces are mounted on the mounting platform, and a second region which is separated from the space between the metal target and the mounting region.