Movable Plasma Source Ion Beam Scanning for Compact Substrate Processing
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Solution Overview
Problem
Conventional ion implantation processing apparatuses require larger dimensions to ensure the entire substrate surface is exposed to the ion beam, which is inefficient in terms of space utilization, especially as substrate sizes increase.
Innovation Solution
A processing apparatus with a movable plasma source that emits an ion beam orthogonal to its scanning direction, allowing for efficient exposure of the entire substrate surface in a smaller form factor, combined with a platen and ion beam current sensor for precise control of the implantation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the substrate is mechanically scanned across a projected ion beam to expose the entire substrate surface, then the entire substrate surface can be treated, but the processing apparatus requires excessively large dimensions especially as substrate sizes increase
Solution Approach 1:
Instead of scanning the substrate across a stationary ion beam, the patent inverts the approach by projecting the ion beam across a stationary substrate. The plasma source is moved to generate and scan the ion beam over the entire substrate surface, eliminating the need for large substrate scanning mechanisms and reducing the overall apparatus footprint while maintaining full substrate coverage
Solution Approach 2:
The patent employs dynamic movement of the plasma source to scan the ion beam across the substrate surface. The plasma source is positioned on a movable platform that can be precisely controlled to sweep the ion beam in patterns covering the entire substrate, enabling flexible and efficient treatment of various substrate sizes without requiring proportionally larger chambers
2Reliability
If the process chamber is made at least twice as large in one dimension as the substrate to allow full surface scanning, then the entire substrate can be treated, but space utilization becomes inefficient
Solution Approach 1:
The patent utilizes motion in the vertical dimension (z-axis) to achieve horizontal coverage (x-y plane). By moving the plasma source vertically and scanning the ion beam across the substrate, the system achieves complete substrate surface treatment within a compact chamber volume, eliminating the need for excessive dimensional margins while ensuring full exposure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables effective ion implantation and etching across the entire substrate surface within a smaller apparatus footprint, maintaining process efficiency and precision by scanning the plasma source relative to a stationary substrate, thus accommodating larger substrates without the need for excessively large process chambers.
Implementation Method 1
a plasma source movable in a first direction and configured to emit an ion beam along a second direction that is orthogonal to the first direction
Implementation Method 2
a plasma source disposed within the process chamber
Implementation Method 3
an ion beam current sensor that is disposed adjacent to the platen
Data Source
AI summary
A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.