Movable Plate Sensors for High-Intensity Beam Position Detection
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Solution Overview
Problem
Existing detectors for high-intensity ionizing beams suffer from structural damage due to thermal drifts and fixed central holes that do not adapt to varying beam conditions, leading to frequent replacements and high maintenance costs.
Innovation Solution
A detecting apparatus with two or more plate-shaped sensors made of semiconductor material, each with different impurity concentrations, movable to optimize beam interception and minimize damage, using integrated filters to discriminate energy components and improve spatial sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a fixed central hole is used in the semiconductor plate to allow beam passage, then the central portion of the beam can pass through without interference, but the peripheral portion surrounding the hole deteriorates due to thermal drifts and structural damage
Solution Approach 1:
The semiconductor plate is divided into multiple independent sensing zones separated by grooves or channels. These segments can independently detect beam position without a single large hole, distributing the thermal load and preventing localized deterioration while maintaining beam access.
Solution Approach 2:
The detection approach transitions from a single-plane hole structure to a three-dimensional segmented architecture with grooves extending through the plate thickness. This dimensional change allows beam passage while distributing thermal stress across multiple separated regions rather than concentrating it around a single hole perimeter.
2Ease of manufacture
If the central hole size is fixed during manufacture, then the sensor structure is simplified, but the device cannot adapt to varying operating conditions of the high-intensity ionizing beam
Solution Approach 1:
The sensor system incorporates movable or adjustable components that allow the effective hole size or sensing zone configuration to be dynamically changed during operation. This enables adaptation to different beam conditions while maintaining a relatively simple fixed manufacturing process for the base structure.
Solution Approach 2:
The sensor operates by changing detection parameters (such as which segmented zones are active, or the electrical bias applied to different regions) rather than physically changing the hole size. This allows adaptability to varying beam conditions while keeping the manufactured structure simple and fixed.
3Measurement precision
If metal plates are deposited on both sides of the semiconductor to collect charges, then charge collection efficiency is improved, but the metallizations become strongly uneven and damaged due to beam displacement during alignment
Solution Approach 1:
The metallization structure includes protective features or design margins that cushion against misalignment damage. The segmented structure with grooves provides mechanical separation that prevents damage propagation, and the metal layers are designed with sufficient thickness or coverage to tolerate reasonable alignment variations without failure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus reduces sensor damage, adapts to beam conditions, and enhances detection accuracy by minimizing thermal loads and improving spatial sensitivity, allowing precise position and displacement measurement.
Implementation Method 1
measuring the properties of a high-intensity ionizing beam by measuring the number of charge carriers released inside the material, through the internal photoelectric effect, by the ionizing beam itself
Data Source
Figure 1a~1b
Figure 1c~1e
Figure 1f~1i
AI summary
Detecting apparatus (1) for detecting the position of a high-intensity ionizing beam (A) emitted along a beam propagation direction (X-X), comprising a first plate-shaped sensor (2) and at least a second plate-shaped sensor (3), both comprising a respective plate (8) of semiconductor material extending between respective first ends (2a, 3a) and second ends (2b, 3b) along a first direction (D1-D1) transverse to the beam propagation direction (X-X). The second end (2b, 3b) of each plate-shaped sensor being configured to partially intercept a high-intensity ionizing beam portion (A) and detect, through photoelectric effect internal to the plate (8) and built-in electric potential active in the plate (8), the intensity and energy of the respective portion of the ionizing beam (A). The second plate-shaped sensor (3) is arranged along the first direction (D1-D1) opposite to the first plate-shaped sensor (2) with respect to the high-intensity ionizing beam (A), the two plate-shaped sensors (2, 3) being movable along the first direction (D1-D1).