Movable Pumping Part for Semiconductor Film Edge Thickness Control

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Solution Overview

Problem

Current semiconductor film deposition apparatuses are unable to effectively control the edge trend of the film profile, limiting their ability to adjust the thickness of the film's edge region during the deposition process.

Innovation Solution

A film deposition apparatus with a movable pumping part that can ascend or descend within the chamber, allowing for adjustment of the gas flow field by changing its position relative to the wafer, thereby controlling the edge trend of the film profile. The apparatus includes a pumping part with pumping holes along its circumference, connected to a pumping pipe and driven by motors to move synchronously with the wafer pocket, ensuring precise control over the gas flow and film deposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a fixed pumping system is used in the deposition apparatus, then the center region film thickness can be controlled, but the edge trend of the film profile cannot be adjusted

Engineering Contradiction:
Improvefilm thickness controlVSAvoidedge trend adjustment capability
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The pumping part is designed to be movable rather than fixed, allowing it to ascend and descend within the chamber. This dynamic positioning capability enables the pumping part to adjust its distance from the wafer, thereby controlling the gas flow field distribution and achieving adjustable edge trend in film deposition while maintaining center thickness control

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention introduces vertical movement of the pumping part as a new degree of freedom. By moving the pumping part up and down in the vertical dimension, the system gains the ability to control edge thickness without compromising center thickness control, effectively adding a new control dimension to the deposition process

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If the pumping part is made movable to adjust gas flow field, then edge thickness control is improved, but device complexity increases

Engineering Contradiction:
Improveedge thickness controlVSAvoidpumping system structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The pumping system is segmented into a movable pumping part and a stationary pumping base plate. The pumping part containing the pumping holes is separated from the base plate, allowing independent movement of the pumping part while the base plate remains fixed. This segmentation enables the desired functionality while managing system complexity through modular design

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The movable pumping part serves multiple functions: it maintains pumping capability while enabling gas flow field adjustment, edge thickness control, and potential synchronization with wafer pocket movement. This multi-functionality reduces the need for additional separate systems, thereby managing overall device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables precise control over the edge thickness of the film, improving the adjustment window and production quality by altering the gas flow field around the wafer, allowing for more accurate film deposition profiles.

Implementation Method 1

adjusting a position of the pumping part in the chamber, thereby adjusting a gas flow field inside the chamber

Methodology Applied
Scientific EffectGas flow field control: Convection

Implementation Method 2

film deposition processing, such as atomic layer deposition (ALD) and plasma enhanced chemical vapor deposition (PECVD)

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS12146220B2Apparatus and method for manufacturing semiconductor film
Publication Date: 2024.11.19 PIOTECH CO LTD
  • US12146220B2 patent drawing
  • US12146220B2 patent drawing
  • US12146220B2 patent drawing

AI summary

The present application provides an apparatus and a method for manufacturing a semiconductor film. The apparatus includes: a chamber; a spray board arranged at a top of the chamber; a wafer pocket arranged opposite to the spray board in the chamber; and a pumping part arranged close to an inner side wall of the chamber.