Movable Susceptor Layout for Epitaxial Wafer Transfer Clearance
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Solution Overview
Problem
In single-wafer vapor phase growth systems, reducing the space height between the substrate and the ceiling plate to increase source gas velocity and growth rate poses challenges in securing sufficient space for substrate transfer members, especially when the configuration is narrowed.
Innovation Solution
A vapor phase growth system with a susceptor lifting mechanism that adjusts the susceptor's position to create a source gas distribution space and a larger substrate loading/unloading space, allowing for sufficient space for substrate transfer members even with a narrower configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the space height between the substrate and the ceiling plate is reduced to increase gas flow velocity and growth rate, then the growth rate of the semiconductor single-crystal layer is improved, but sufficient space for substrate transfer cannot be secured
Solution Approach 1:
The susceptor is designed to be movable in the vertical direction, allowing the space height between the substrate and ceiling plate to be dynamically adjusted. During substrate transfer, the susceptor moves to a lower position to provide sufficient clearance. During epitaxial growth, the susceptor moves to an upper position to reduce the space height and increase gas flow velocity, thereby resolving the contradiction between growth rate and transfer space requirements
Solution Approach 2:
The solution moves the adjustment from the horizontal plane to the vertical dimension. By changing the vertical position of the susceptor, the patent creates variable space height without affecting the horizontal footprint of the reaction vessel, allowing optimal conditions for both transfer operations and growth processes
2Productivity
If the velocity of the source gas along the main surface of the substrate is increased to enhance growth rate, then the growth rate of the silicon single-crystal thin film is improved, but the temperature of the main surface of the substrate decreases
Solution Approach 1:
The patent changes the velocity parameter of the source gas to increase the growth rate. By controlling the gas flow velocity along the main surface of the substrate, the system achieves higher deposition rates while managing the associated temperature decrease through the overall thermal environment control in the reaction vessel
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient growth of semiconductor single-crystal layers with increased growth rates while ensuring adequate space for substrate transfer, enhancing the overall production efficiency and flexibility of the system.
Implementation Method 1
source gas is introduced through a gas inlet port formed on one end side of the reaction vessel body in a horizontal direction, and after flowing along the main surface of a single-crystal substrate, which is substantially horizontally and rotationally held in an inner space of the reaction vessel body, the source gas is discharged through a gas outlet port formed on the other end side
Implementation Method 2
it is a common practice in a single-wafer vapor phase growth system to provide a preheating ring around a susceptor to ensure even heating of the peripheral edge of the substrate
Implementation Method 3
In general, infrared radiation heating, high-frequency induction heating, or resistance heating is used to heat the substrate during the production of silicon epitaxial wafers
Implementation Method 4
the growth rate of a silicon single-crystal layer deposited on the substrate can be increased by increasing the relative velocity between the main surface of the substrate and the source gas by increasing the rotation speed of the susceptor
Implementation Method 5
growing vapor phase of a semiconductor single-crystal thin film on a main surface of a single-crystal substrate
Data Source
AI summary
A vapor phase growth system includes a process chamber that includes a susceptor lifting mechanism that raises and lowers the susceptor between a first position and a second position. With the susceptor in the first position, the top surface of the susceptor is above the bottom surface of the preheating ring, and a source gas distribution space with a predetermined height dimension is secured between the top surface of the susceptor and the bottom surface of a ceiling plate of the reaction vessel body. With the susceptor in the second position, the top surface of the susceptor is located below the bottom surface of a preheating ring, and a substrate loading/unloading space, which has a greater height dimension than that of the source gas distribution space, is secured between the top surface of the susceptor and the bottom surface of the preheating ring.