Moving Gas Nozzle Control for Uniform Wafer Film Thickness
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate-processing methods face challenges in achieving high in-plane uniformity of film thickness on semiconductor wafers due to variations in substrate surface area and pattern density, leading to inefficiencies in gas distribution and film formation.
Innovation Solution
A substrate-processing method and apparatus that adjust the flow rate and swing speed of gas discharge mechanisms in accordance with the surface area of the substrate, ensuring precise gas distribution by dividing the substrate into sections and optimizing gas supply to each area, thereby maintaining uniform film thickness and improving processing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas is supplied uniformly across the substrate surface, then the process is simple, but film thickness uniformity deteriorates due to variations in substrate surface area and pattern density
Solution Approach 1:
The gas supply system is divided into multiple regions (first region, second region, third region) with different gas flow rates. The first and third regions have higher gas flow rates than the second region, creating local quality variations that compensate for pattern density differences and achieve uniform film thickness across the substrate surface.
Solution Approach 2:
The substrate processing surface is segmented into multiple regions for differential gas supply. By dividing the gas supply control into separate zones, the system can independently adjust gas flow rates to match the specific processing requirements of each region, thereby improving film thickness uniformity.
2Productivity
If the nozzle moves quickly across the substrate, then processing time is reduced, but gas distribution uniformity deteriorates
Solution Approach 1:
The gas flow rate is made dynamic by adjusting it according to the nozzle's position and movement speed. The control system varies the gas flow rate in real-time based on the relative movement between the nozzle and substrate, ensuring uniform gas distribution even during high-speed processing.
Solution Approach 2:
The system uses feedback control to adjust gas flow rates based on the actual relative position and speed of the nozzle. By monitoring the movement state and dynamically adjusting gas supply, the system maintains optimal gas distribution uniformity while achieving high processing speeds.
3Manufacturing precision
If gas flow rate is increased to compensate for large surface area, then film formation improves, but gas waste increases
Solution Approach 1:
Different regions of the substrate receive different gas flow rates according to their specific needs. Regions with larger effective surface areas or lower pattern density receive higher gas flow rates, while regions with smaller surface areas or higher pattern density receive lower gas flow rates, optimizing both film formation quality and gas consumption efficiency.
Solution Approach 2:
The gas flow rate parameter is dynamically changed based on the substrate surface area and pattern density of each region. By adjusting the gas flow rate parameter to match the local processing requirements, the system achieves optimal film formation while minimizing gas waste.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high accuracy and efficiency in substrate processing by adapting gas flow rates and swing speeds to match substrate surface area variations, ensuring consistent film thickness and quality across the substrate, even with complex patterns, thus enhancing processing efficiency and reducing the loading effect.
Implementation Method 1
discharging gas from a discharge hole of a nozzle gas discharge mechanism toward the substrate that is rotating in (A)... forming films
Data Source
AI summary
A substrate-processing method for processing a substrate includes (A) holding the substrate by a substrate holder in a process chamber and rotating the substrate; (B) discharging gas from a discharge hole of a nozzle gas discharge mechanism toward the substrate that is rotating in (A); and (C) moving the nozzle gas discharge mechanism relative to the substrate in a direction parallel to a surface of the substrate held by the substrate holder so that the discharge hole passes through a center of the substrate. In (B), a flow rate of the gas discharged from the discharge hole is changed in accordance with a surface area of a section of the substrate, the section being faced by the discharge hole of the nozzle gas discharge mechanism that is moving relative to the substrate in (C).