MPS Diode Donor Concentration Gradient for Power Efficiency
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional MPS diodes face challenges in enhancing power conversion efficiency due to limitations in breakdown voltage under reverse bias and rising voltage under forward bias, particularly in nitride compound-based semiconductor devices.
Innovation Solution
The MPS diode design incorporates alternately arranged P-type and N-type semiconductor regions with a Schottky electrode, where the donor concentration in the N-type semiconductor region is strategically varied to improve breakdown voltage and reduce rising voltage, utilizing gallium nitride and silicon materials, and optionally includes a field plate electrode for further enhancement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the donor concentration in the N-type semiconductor region is increased, then the rising voltage under forward bias is reduced, but the breakdown voltage under reverse bias deteriorates
Solution Approach 1:
The patent applies local quality by creating three distinct donor concentration zones within the N-type semiconductor region: a first zone adjacent to the first semiconductor layer with lower donor concentration, a second zone in the middle with intermediate donor concentration, and a third zone adjacent to the Schottky electrode with higher donor concentration. This spatial variation in doping concentration allows different regions to fulfill different functions - the low-doped region maintains high breakdown voltage, while the high-doped region reduces rising voltage, thereby resolving the technical contradiction.
Solution Approach 2:
The patent employs parameter changes by systematically varying the donor concentration across the N-type semiconductor region. Specifically, the donor concentration increases from the first zone (lower concentration) through the second zone (intermediate concentration) to the third zone (higher concentration). This gradient in doping parameter enables simultaneous optimization of both breakdown voltage and rising voltage characteristics, improving power conversion efficiency without sacrificing reliability.
2Power
If the donor concentration is uniformly high throughout the N-type semiconductor region, then the rising voltage is reduced, but the breakdown voltage significantly deteriorates
Solution Approach 1:
The patent divides the N-type semiconductor region into three zones with different donor concentrations, where only the third zone (adjacent to the Schottky electrode) has high donor concentration to reduce rising voltage, while the first and second zones maintain lower concentrations to preserve breakdown voltage. This localized approach to doping optimization resolves the contradiction between reducing rising voltage and maintaining breakdown voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively increases breakdown voltage under reverse bias and reduces rising voltage under forward bias, enhancing power conversion efficiency and protecting the Schottky junction with a depletion layer.
Implementation Method 1
a Schottky electrode in Schottky junction with the N-type semiconductor regions
Implementation Method 2
protecting the Schottky junction with a depletion layer
Implementation Method 3
a donor concentration in an area of the N-type semiconductor region that is adjacent to and in contact with the first semiconductor layer is lower than the donor concentration in an area of the first semiconductor layer that is adjacent to and in contact with the N-type semiconductor region and is lower than the donor concentration in an area of the N-type semiconductor region that is adjacent to and in contact with the Schottky electrode
Data Source
AI summary
There is provided an MPS diode comprising a first semiconductor layer that is an N type; P-type semiconductor regions and N-type semiconductor regions that are arranged alternately on one surface of the first semiconductor layer; and a Schottky electrode that is in Schottky junction with the N-type semiconductor regions and is arranged to be adjacent to and in contact with at least part of the P-type semiconductor regions. A donor concentration in an area of the N-type semiconductor region that is adjacent to and in contact with the first semiconductor layer is lower than the donor concentration in an area of the first semiconductor layer that is adjacent to and in contact with the N-type semiconductor region and is lower than the donor concentration in an area of the N-type semiconductor region that is adjacent to and in contact with the Schottky electrode. This configuration improves a breakdown voltage under applying a reverse bias voltage and reduces a rising voltage under applying a forward bias voltage.