MRAM Deposition Particle Control Using Magnetic and Electrostatic Fields
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Solution Overview
Problem
Magnetoresistive random-access memory (MRAM) technologies face contamination issues during film deposition due to target-related contamination, such as particles from the target surface, which affect film growth and device performance, and existing methods do not effectively address these issues.
Innovation Solution
A physical vapor deposition system equipped with a particle control system that uses a combination of magnetic and electrostatic forces to separate and remove contamination particles from target atoms, ensuring cleaner film deposition by adjusting the trajectories of charged particles within the processing chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If physical vapor deposition is used to deposit multiple layers of materials, then film deposition is achieved, but target-related contamination (particles) is introduced into the deposited film
Solution Approach 1:
The patent extracts harmful particles from the deposition process by introducing a magnetic field that selectively deflects charged particles (ions and electrons) away from the substrate while allowing neutral atoms to deposit. This separates the harmful charged components from the useful neutral material flux, removing contamination before it reaches the film.
Solution Approach 2:
The patent introduces a magnetic field as an intermediary element between the target and substrate. This magnetic field acts as a mediator that selectively interacts with charged particles, deflecting them through magnetic force while permitting neutral atoms to pass through and deposit on the substrate, thus filtering contamination without blocking the deposition process.
2Object-generated harmful factors
If magnetic and electrostatic forces are applied to control particle trajectories, then contamination particles are separated from target atoms, but system complexity increases
Solution Approach 1:
The patent replaces complex mechanical particle removal systems with a magnetic field-based control mechanism. Instead of using physical barriers, filters, or mechanical sorting devices, the invention uses magnetic forces to selectively deflect charged particles, achieving particle separation through field-based control rather than mechanical means.
Solution Approach 2:
The patent changes the physical state and trajectory control of particles by applying magnetic and electrostatic fields. By adjusting field strength, direction, and configuration, the system dynamically controls particle paths, separating contaminated charged particles from clean neutral atoms without requiring complex mechanical sorting infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively reduces contamination in the deposited film, improving film growth and device performance by efficiently separating contamination particles from target atoms, thereby enhancing the quality of the deposited layers.
Implementation Method 1
A physical vapor deposition system equipped with a particle control system that uses a combination of magnetic and electrostatic forces to separate and remove contamination particles from target atoms
Implementation Method 2
A physical vapor deposition system equipped with a particle control system that uses a combination of magnetic and electrostatic forces to separate and remove contamination particles from target atoms
Implementation Method 3
Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology and typically, such memory is fabricated by depositing multiple layers of materials using a physical vapor deposition system under vacuum
Data Source
AI summary
A system and method for reducing particle contamination on substrates during a deposition process using a particle control system is disclosed here. In one embodiment, a film deposition system includes: a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma, wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.