MRAM Display Driver System Eliminates Static Power

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Solution Overview

Problem

Existing display memory technologies, such as SRAM and 1-TSRAM, face challenges with high static power consumption and the need for periodic memory refresh, making it difficult to scale them to fit the physical dimensions required by higher resolution displays.

Innovation Solution

The integration of Magnetic Random Access Memory (MRAM) in a single semiconductor device for display driver systems, which eliminates static power consumption and data refresh requirements, using methods like Field Induced Switching, Spin Torque Transfer, and Thermally Assisted Switching for storing and retrieving display pixel information.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by stationary object

If SRAM or 1-TSRAM is used for display memory buffer, then data storage capability is provided, but static power consumption increases and periodic refresh is required

Engineering Contradiction:

Improvestatic power consumptionVSAvoiddata retention without refresh

Core Design Contradiction:

Use of energy by stationary objectVSReliability

Solution Approach 1:

The patent transitions from volatile memory (SRAM/1T-SRAM) to non-volatile magnetic memory (MRAM), fundamentally changing the memory parameter from requiring periodic refresh to maintaining data retention without power consumption. This parameter change eliminates the technical contradiction by providing both zero static power consumption and reliable data retention.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces the electrical field-based memory mechanism (SRAM capacitors) with a magnetic field-based mechanism (MRAM magnetic moments). This substitution eliminates the need for periodic electrical refresh operations while maintaining data storage capability, thereby resolving the contradiction between power consumption and data retention reliability.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Productivity

If buffer memory size is increased to meet higher resolution display demands, then display resolution capability is improved, but physical footprint and scaling difficulty increase

Engineering Contradiction:

Improvedisplay resolution capabilityVSAvoidbuffer memory footprint

Core Design Contradiction:

ProductivityVSArea of stationary object

Solution Approach 1:

The patent changes the memory technology parameter from SRAM to MRAM, which has superior storage density. This parameter change enables the buffer memory to provide the required capacity for high-resolution displays while occupying a smaller physical footprint, thus resolving the contradiction between display resolution capability and memory footprint.

Inventive Principle:

Principle #35Parameter changes

3Area of stationary object

If SRAM is scaled down to fit physical dimensions, then footprint is reduced, but manufacturing complexity and difficulty increase

Engineering Contradiction:

Improvememory footprintVSAvoidscaling manufacturing difficulty

Core Design Contradiction:

Area of stationary objectVSEase of manufacture

Solution Approach 1:

The patent substitutes SRAM technology with MRAM technology, which uses magnetic switching mechanisms instead of electrical field-based transistor-capacitor structures. This substitution enables scaling to smaller footprints without encountering the manufacturing complexity and reliability issues that arise when scaling SRAM, thereby resolving the contradiction between reduced footprint and ease of manufacture.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables efficient, low-power display driver systems that can scale with increasing resolution demands without the need for periodic refresh, offering a smaller footprint and reduced power consumption.

Implementation Method 1

MRAMs may be implemented using Field Induced Switching, Spin Torque Transfer, Thermally Assisted Switching and others

Methodology Applied

Scientific EffectField Induced Switching: Magnetic Field

Implementation Method 2

MRAMs may be implemented using Field Induced Switching, Spin Torque Transfer, Thermally Assisted Switching and others

Methodology Applied

Scientific EffectSpin Torque Transfer:

Implementation Method 3

MRAMs may be implemented using Field Induced Switching, Spin Torque Transfer, Thermally Assisted Switching and others

Methodology Applied

Scientific EffectThermally Assisted Switching:

Implementation Method 4

a read circuit for reading data from selected bits in the array based on a memory address of the selected bits

Methodology Applied

Scientific EffectMagnetic field detection: Magnetic Field

Implementation Method 5

a write circuit for writing data to the array given write data and a memory address in the array at which to write the write data

Methodology Applied

Scientific EffectMagnetic field induction: Magnetic Field

Data Source

PatentUS8913069B2Magnetic memory display driver system

Publication Date: 2014.12.16 III HOLDINGS 1 LLC

AI summary

In one embodiment there is provided, a display driver system, comprising, at least one display driver; a magnetic random access memory (MRAM) macro; and a display driver interface coupling the MRAM macro and the at least one display driver.